Metal-oxide-semiconductor characteristics of thermally grown nitrided SiO2 thin film on 4H-SiC in various N2O ambient

Thin Solid Films

Volumn 518, Issue 12, 2010, Pages 3255-3259

  Cheong, Kuan Yew ^a   Moon, JeongHyun ^b   Kim, Hyeong Joon ^b   Bahng, Wook ^c   Kim, Nam Kyun ^c  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^b Seoul National University   (South Korea)

^c Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

Electrical properties and measurements; Interface; Metal oxide semiconductor structure; Nitridation; X ray photoelectron spectroscopy

Indexed keywords

APPLIED ELECTRIC FIELD; CHEMICAL COMPOSITIONS; DENSITY VALUE; DIELECTRIC BREAKDOWNS; EFFECTIVE OXIDE CHARGE; ELECTRICAL PROPERTIES AND MEASUREMENTS; HIGH PURITY; INTERFACE; INTERFACE TRAP DENSITY; INTERFACIAL LAYER; METAL OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR STRUCTURES; OXIDE TRAPS; SEMICONDUCTOR INTERFACES; SILICON OXYNITRIDES; SINGLE LAYER; THIN FILM OXIDES;

DIELECTRIC DEVICES; ELECTRIC FIELDS; LEAKAGE CURRENTS; METALS; ORGANIC LIGHT EMITTING DIODES (OLED); PHASE INTERFACES; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON NITRIDE; SILICON OXIDES; STOICHIOMETRY; THIN FILM DEVICES; THIN FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77749314693     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.11.003     Document Type: Article

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