Interface properties of N2O-annealed SiC metal oxide semiconductor devices

Solid-State Electronics

Volumn 45, Issue 3, 2001, Pages 471-474

  Chakraborty, S ^a   Lai, P T ^a   Xu, J P ^a   Chan, C L ^a   Cheng, Y C ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

High field stress; Interface property; Metal oxide semiconductor device; Semiconductor device; Silicon carbide; Silicon dioxide

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); NITRIDING; NITROGEN OXIDES; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; STRESS ANALYSIS;

ACCEPTOR-TYPE INTERFACES; HIGH FIELD STRESS; INTERFACE-STATE DENSITIES;

MOS CAPACITORS;

EID: 0035275961     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00029-6     Document Type: Article

References (17)

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