Influence of oxygen content on the physical and electrical properties of thin yttrium oxide dielectrics deposited by reactive RF sputtering on Si substrates

Journal of Electronic Materials

Volumn 36, Issue 10, 2007, Pages 1395-1403

  Pan, Tung Ming ^a   Lee, Jian Der ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Amorphous silica; And surface roughness; Gate leakage current; Hysteresis voltage; Interfacial density of states; Silicate; Y 2O 3 gate oxide

Indexed keywords

GATE LEAKAGE CURRENT; HYSTERESIS VOLTAGE; INTERFACIAL DENSITY; SILICATE;

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; LEAKAGE CURRENTS; MORPHOLOGY; SUBSTRATES; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM OXIDE;

DIELECTRIC MATERIALS;

EID: 34848914515     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0250-1     Document Type: Article

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