Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient

Materials Chemistry and Physics

Volumn 130, Issue 3, 2011, Pages 1007-1015

  Quah, Hock Jin ^a   Cheong, Kuan Yew ^a  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

Author keywords

Annealing; Electrical properties; Sputtering; Thin films

Indexed keywords

ARGON AMBIENT; BARRIER HEIGHTS; CHEMICAL BONDINGS; CHEMICAL FUNCTIONAL GROUPS; EFFECTIVE OXIDE CHARGE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FOURIER TRANSFORM INFRARED SPECTROMETER; FTIR; FTIR ANALYSIS; INTERFACE TRAP DENSITY; INTERFACIAL LAYER; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; POST DEPOSITION ANNEALING; RF-MAGNETRON SPUTTERING; SI SUBSTRATES; SI(1 0 0); TEST STRUCTURE; XRD;

ANNEALING; ARGON; ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; CHEMICAL DETECTION; ELECTRIC PROPERTIES; FIELD EMISSION MICROSCOPES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; FUNCTIONAL GROUPS; MAGNETRON SPUTTERING; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; X RAY DIFFRACTION;

SILICON;

EID: 80054017643     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2011.08.024     Document Type: Article

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