Current conduction and dielectric behavior of high k-Y2O 3 films integrated with Si using chemical vapor deposition as a gate dielectric for metal-oxide-semiconductor devices

Journal of Electroceramics

Volumn 13, Issue 1-3, 2004, Pages 121-127

  Rastogi, A C ^a   Desu, S B ^a  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

High k oxides; LPCVD; MOS storage capacitor; Y2O3 films

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; HYSTERESIS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOS DEVICES; THIN FILMS;

BIDIRECTIONAL HYSTERISIS; INTERFACIAL REACTIONS; MEMORY FUNCTIONS; POOLE FRANKEL (PF) PROCESS;

DIELECTRIC FILMS;

EID: 17044401719     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10832-004-5087-x     Document Type: Conference Paper

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