SCOPUS 정보 검색 플랫폼

Journal of Materials Science: Materials in Electronics

Volumn 22, Issue 6, 2011, Pages 583-591

Investigation of forming-gas annealed CeO 2 thin film on GaN

(4) Quah, Hock Jin a Cheong, Kuan Yew a Hassan, Zainuriah b Lockman, Zainovia a

a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING (Malaysia)

b SCHOOL OF PHYSICS (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ANNEALING TEMPERATURES; CERIUM OXIDES; DIELECTRIC BREAKDOWNS; EFFECTIVE OXIDE CHARGE; FORMING GAS; GAN SUBSTRATE; GRAIN SIZE; METAL OXIDE SEMICONDUCTOR; METAL-ORGANIC; MICROSTRAINS; PHASE TRANSFORMATION; POST DEPOSITION ANNEALING; SEMICONDUCTOR-OXIDE INTERFACE;

CERIUM; CERIUM COMPOUNDS; GALLIUM NITRIDE; INVESTMENTS; METAL ANALYSIS; OXIDE FILMS; THIN FILMS; VAPOR DEPOSITION;

ANNEALING;

EID: 79958833364 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-010-0181-0 Document Type: Article

Times cited : (29)

References (87)

1
- 34250703717
- 2 on GaN
- DOI 10.1063/1.2746057
- YC Chang HC Chiu YJ Lee ML Huang KY Lee M Hong YN Chiu J Kwo YH Wang 2007 Appl Phys Lett 90 232904 10.1063/1.2746057 (Pubitemid 46960302)
- (2007) Applied Physics Letters , vol.90 , Issue.23 , pp. 232904
- Chang, Y.C.¹ Chiu, H.C.² Lee, Y.J.³ Huang, M.L.⁴ Lee, K.Y.⁵ Hong, M.⁶ Chiu, Y.N.⁷ Kwo, J.⁸ Wang, Y.H.⁹

2
- 51849108058
- 10.1063/1.2969282
- YC Chang WH Chang HC Chiu LT Tung CH Lee KH Shiu M Hong J Kwo JM Hong CC Tsai 2008 Appl Phys Lett 93 053504 10.1063/1.2969282
- (2008) Appl Phys Lett , vol.93 , pp. 053504
- Chang, Y.C.¹ Chang, W.H.² Chiu, H.C.³ Tung, L.T.⁴ Lee, C.H.⁵ Shiu, K.H.⁶ Hong, M.⁷ Kwo, J.⁸ Hong, J.M.⁹ Tsai, C.C.¹⁰

3
- 41449094688
- Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate
- DOI 10.1016/j.sse.2007.10.045, PII S0038110107004030
- Y Zhou C Ahyi TI Smith M Bozack C Tin J Williams M Park A Cheng J Park D Kim D Wang EA Preble A Hanser K Evans 2008 Solid-State Electron 52 756 10.1016/j.sse.2007.10.045 1:CAS:528:DC%2BD1cXktlWrur4%3D (Pubitemid 351458492)
- (2008) Solid-State Electronics , vol.52 , Issue.5 , pp. 756-764
- Zhou, Y.¹ Ahyi, C.² Isaacs-Smith, T.³ Bozack, M.⁴ Tin, C.-C.⁵ Williams, J.⁶ Park, M.⁷ Cheng, A.-j.⁸ Park, J.-H.⁹ Kim, D.-J.¹⁰ Wang, D.¹¹ Preble, E.A.¹² Hanser, A.¹³ Evans, K.¹⁴

4
- 58149479699
- 10.1149/1.3046004 1:CAS:528:DC%2BD1MXotVGltw%3D%3D
- JD Hwang DC Lin 2009 Electrochem Solid-State Lett 12 H47 10.1149/1.3046004 1:CAS:528:DC%2BD1MXotVGltw%3D%3D
- (2009) Electrochem Solid-State Lett , vol.12 , pp. 47
- Hwang, J.D.¹ Lin, D.C.²

5
- 33947599249
- 10.1109/LED.2006.883054 1:CAS:528:DC%2BD28XhtFemtrjI
- W Huang T Khan TP Chow 2006 IEEE Electron Device Lett 27 796 10.1109/LED.2006.883054 1:CAS:528:DC%2BD28XhtFemtrjI
- (2006) IEEE Electron Device Lett , vol.27 , pp. 796
- Huang, W.¹ Khan, T.² Chow, T.P.³

6
- 34047260562
- 3/GaN metal-oxide-semiconductor structures
- DOI 10.1063/1.2719228
- YQ Wu T Shen PD Ye GD Wilk 2007 Appl Phys Lett 90 143504 10.1063/1.2719228 (Pubitemid 46550157)
- (2007) Applied Physics Letters , vol.90 , Issue.14 , pp. 143504
- Wu, Y.Q.¹ Shen, T.² Ye, P.D.³ Wilk, G.D.⁴

7
- 33750724450
- 3 prepared by pulsed laser deposition
- DOI 10.1063/1.2374806
- S Lee J Hwang J Kim S Jeong C Cho 2006 Appl Phys Lett 89 182906 10.1063/1.2374806 (Pubitemid 44705731)
- (2006) Applied Physics Letters , vol.89 , Issue.18 , pp. 182906
- Lee, S.-A.¹ Hwang, J.-Y.² Kim, J.-P.³ Jeong, S.-Y.⁴ Cho, C.-R.⁵

8
- 0043175234
- 10.1109/TED.2003.813456 1:CAS:528:DC%2BD3sXmsVersbo%3D
- K Matocha RJ Gutmann TP Chow 2003 IEEE Trans Electron Devices 50 1200 10.1109/TED.2003.813456 1:CAS:528:DC%2BD3sXmsVersbo%3D
- (2003) IEEE Trans Electron Devices , vol.50 , pp. 1200
- Matocha, K.¹ Gutmann, R.J.² Chow, T.P.³

9
- 33744801086
- 3/GaN heterostructure
- DOI 10.1063/1.2209178
- C Liu EF Chor LS Tan Y Dong 2006 Appl Phys Lett 88 222113 10.1063/1.2209178 (Pubitemid 43839224)
- (2006) Applied Physics Letters , vol.88 , Issue.22 , pp. 222113
- Liu, C.¹ Chor, E.F.² Tan, L.S.³ Dong, Y.⁴

10
- 79956004334
- 2/n-GaN metal-insulator- semiconductor structures
- DOI 10.1063/1.1486266
- Y Nakano T Jimbo 2002 Appl Phys Lett 80 4756 10.1063/1.1486266 1:CAS:528:DC%2BD38Xkslelurw%3D (Pubitemid 34783158)
- (2002) Applied Physics Letters , vol.80 , Issue.25 , pp. 4756
- Nakano, Y.¹ Jimbo, T.²

11
- 33947601387
- Comparison of metal-oxide-semiconductor capacitors on c- and m-plane gallium nitride
- DOI 10.1063/1.2716309
- K Matocha V Tilak G Dunne 2007 Appl Phys Lett 90 123511 10.1063/1.2716309 (Pubitemid 46482287)
- (2007) Applied Physics Letters , vol.90 , Issue.12 , pp. 123511
- Matocha, K.¹ Tilak, V.² Dunne, G.³

12
- 21944449679
- 4/n-GaN insulator-semiconductor interfaces with low interface state density
- DOI 10.1063/1.122009, PII S0003695198040327
- S Arulkumaran T Egawa H Ishikawa T Jimbo M Umeno 1998 Appl Phys Lett 73 809 10.1063/1.122009 1:CAS:528:DyaK1cXkvVOjsrg%3D (Pubitemid 128673924)
- (1998) Applied Physics Letters , vol.73 , Issue.6 , pp. 809-811
- Arulkumaran, S.¹ Egawa, T.² Ishikawa, H.³ Jimbo, T.⁴ Umeno, M.⁵

13
- 0037434211
- 10.1063/1.1536029 1:CAS:528:DC%2BD3sXhs1GgtQ%3D%3D
- Y Nakano T Jimbo 2003 Appl Phys Lett 82 218 10.1063/1.1536029 1:CAS:528:DC%2BD3sXhs1GgtQ%3D%3D
- (2003) Appl Phys Lett , vol.82 , pp. 218
- Nakano, Y.¹ Jimbo, T.²

14
- 0035269474
- Thermally oxidized GaN film for use as gate insulators
- DOI 10.1116/1.1349733
- H Kim S Park H Hwang 2001 J Vac Sci Technol B 19 579 10.1116/1.1349733 1:CAS:528:DC%2BD3MXisV2ntb8%3D (Pubitemid 32454160)
- (2001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.19 , Issue.2 , pp. 579-581
- Kim, H.¹ Park, S.-J.² Hwang, H.³

15
- 30344478241
- High-voltage SiC and GaN power devices
- DOI 10.1016/j.mee.2005.10.057, PII S0167931705004983
- TP Chow 2006 Microelectron Eng 83 112 10.1016/j.mee.2005.10.057 1:CAS:528:DC%2BD28Xjsl2msg%3D%3D (Pubitemid 43065195)
- (2006) Microelectronic Engineering , vol.83 , Issue.1 SPEC. ISS. , pp. 112-122
- Chow, T.P.¹

16
- 0032304725
- 10.1016/S0038-1101(98)00208-1 1:CAS:528:DyaK1cXotFSjsbY%3D
- MS Shur 1998 Solid-State Electron 42 2131 10.1016/S0038-1101(98)00208-1 1:CAS:528:DyaK1cXotFSjsbY%3D
- (1998) Solid-State Electron , vol.42 , pp. 2131
- Shur, M.S.¹

17
- 12344314332
- High-voltage normally off GaN MOSFETs on sapphire substrates
- DOI 10.1109/TED.2004.841355
- K Matocha TP Chow RJ Gutmann 2005 IEEE Trans Electron Devices 52 6 10.1109/TED.2004.841355 1:CAS:528:DC%2BD2MXmvVagsg%3D%3D (Pubitemid 40118904)
- (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.1 , pp. 6-10
- Matocha, K.¹ Chow, T.P.² Gutmann, R.J.³

18
- 33846956156
- 10.1149/1.2429043 1:CAS:528:DC%2BD2sXhvVaqsbw%3D
- LM Lin PT Lai 2007 J Electrochem Soc 154 G58 10.1149/1.2429043 1:CAS:528:DC%2BD2sXhvVaqsbw%3D
- (2007) J Electrochem Soc , vol.154 , pp. 58
- Lin, L.M.¹ Lai, P.T.²

19
- 43049147116
- Current conduction mechanisms in atomic-layer-deposited HfO2 /nitrided SiO2 stacked gate on 4H silicon carbide
- DOI 10.1063/1.2908870
- KY Cheong JH Moon HJ Kim W Bahng NK Kim 2008 J Appl Phys 103 084113 10.1063/1.2908870 (Pubitemid 351623617)
- (2008) Journal of Applied Physics , vol.103 , Issue.8 , pp. 084113
- Cheong, K.Y.¹ Moon, J.H.² Kim, H.J.³ Bahng, W.⁴ Kim, N.-K.⁵

20
- 36148980875
- 2 on photochemical treated GaN
- DOI 10.1149/1.2803054
- M Lee C Ho J Zeng 2008 Electrochem Solid-State Lett 11 D9 10.1149/1.2803054 1:CAS:528:DC%2BD2sXhsVOlsbvP (Pubitemid 350115960)
- (2008) Electrochemical and Solid-State Letters , vol.11 , Issue.1
- Lee, M.-K.¹ Ho, C.-L.² Zeng, J.-Y.³

21
- 34547187169
- 2/GaN interface for enhanced operation field-effect transistor
- DOI 10.1002/pssa.200674844
- Y Niiyama T Shinagawa S Ootomo H Kambayashi T Nomura S Yoshida 2007 Phys Stat Sol (a) 204 2032 10.1002/pssa.200674844 1:CAS:528:DC%2BD2sXntl2mt7w%3D (Pubitemid 47120216)
- (2007) Physica Status Solidi (A) Applications and Materials , vol.204 , Issue.6 , pp. 2032-2036
- Niiyama, Y.¹ Shinagawa, T.² Ootomo, S.³ Kambayashi, H.⁴ Nomura, T.⁵ Yoshida, S.⁶

22
- 33750820446
- 3 film grown on GaN
- DOI 10.1016/j.tsf.2006.07.036, PII S0040609006008364
- LM Lin Y Luo PT Lai KM Lau 2006 Thin Solid Films 515 2111 10.1016/j.tsf.2006.07.036 1:CAS:528:DC%2BD28Xht1Wqs7%2FO (Pubitemid 44716170)
- (2006) Thin Solid Films , vol.515 , Issue.4 , pp. 2111-2115
- Lin, L.M.¹ Luo, Y.² Lai, P.T.³ Lau, K.M.⁴

23
- 33645532960
- 10.1143/JJAP.41.L1437
- D Fu TW Kang 2002 Jpn J Appl Phys 41 1437 10.1143/JJAP.41.L1437
- (2002) Jpn J Appl Phys , vol.41 , pp. 1437
- Fu, D.¹ Kang, T.W.²

24
- 0001126465
- 10.1063/1.1332815 1:CAS:528:DC%2BD3cXosVOgtbw%3D
- LW Tu WC Kuo KH Lee PH Tsao CM Lai AK Chu JK Sheu 2000 Appl Phys Lett 77 3788 10.1063/1.1332815 1:CAS:528:DC%2BD3cXosVOgtbw%3D
- (2000) Appl Phys Lett , vol.77 , pp. 3788
- Tu, L.W.¹ Kuo, W.C.² Lee, K.H.³ Tsao, P.H.⁴ Lai, C.M.⁵ Chu, A.K.⁶ Sheu, J.K.⁷

25
- 0036687452
- Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide
- DOI 10.1149/1.1489689
- J Kim B Gila R Mehandru JW Johnson JH Shin KP Lee B Luo A Onstine CR Abernathy SJ Pearton F Ren 2002 J Electrochem Soc 149 G482 10.1149/1.1489689 1:CAS:528:DC%2BD38Xls1Sltbg%3D (Pubitemid 34962476)
- (2002) Journal of the Electrochemical Society , vol.149 , Issue.8
- Kim, J.¹ Gila, B.² Mehandru, R.³ Johnson, J.W.⁴ Shin, J.H.⁵ Lee, K.P.⁶ Luo, B.⁷ Onstine, A.⁸ Abernathy, C.R.⁹ Pearton, S.J.¹⁰ Ren, F.¹¹

26
- 31544461294
- Determination of MgOGaN heterojunction band offsets by x-ray photoelectron spectroscopy
- DOI 10.1063/1.2170140, 042113
- J Chen BP Gila M Hlad A Gerger F Ren CR Abernathy SJ Pearton 2006 Appl Phys Lett 88 042113 10.1063/1.2170140 (Pubitemid 43164065)
- (2006) Applied Physics Letters , vol.88 , Issue.4 , pp. 1-3
- Chen, J.-J.¹ Gila, B.P.² Hlad, M.³ Gerger, A.⁴ Ren, F.⁵ Abernathy, C.R.⁶ Pearton, S.J.⁷

27
- 35348866770
- Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy
- DOI 10.1063/1.2785022
- HS Craft R Collazo MD Losego S Mita Z Sitar JP Maria 2007 J Appl Phys 102 074104 10.1063/1.2785022 (Pubitemid 47587855)
- (2007) Journal of Applied Physics , vol.102 , Issue.7 , pp. 074104
- Craft, H.S.¹ Collazo, R.² Losego, M.D.³ Mita, S.⁴ Sitar, Z.⁵ Maria, J.-P.⁶

28
- 63349089776
- 10.1016/j.jcrysgro.2008.11.011 1:CAS:528:DC%2BD1MXktFSgtbc%3D
- YH Chang HC Chiu WH Chang J Kwo CC Tsai JM Hong M Hong 2009 J Cryst Growth 311 2084 10.1016/j.jcrysgro.2008.11.011 1:CAS:528:DC%2BD1MXktFSgtbc%3D
- (2009) J Cryst Growth , vol.311 , pp. 2084
- Chang, Y.H.¹ Chiu, H.C.² Chang, W.H.³ Kwo, J.⁴ Tsai, C.C.⁵ Hong, J.M.⁶ Hong, M.⁷

29
- 66749146122
- 10.1002/pssc.200778663 1:CAS:528:DC%2BD1cXntFWktLw%3D
- C Ostermaier H Lee S Hyun S Ahn K Kim H Cho J Ha J Lee 2008 Phys Stat Sol 5 1992 10.1002/pssc.200778663 1:CAS:528:DC%2BD1cXntFWktLw%3D
- (2008) Phys Stat Sol , vol.5 , pp. 1992
- Ostermaier, C.¹ Lee, H.² Hyun, S.³ Ahn, S.⁴ Kim, K.⁵ Cho, H.⁶ Ha, J.⁷ Lee, J.⁸

30
- 0032576518
- 3)/GaN metal-oxide-semiconductor field-effect transistors
- DOI 10.1063/1.122927, PII S0003695198027521
- F Ren M Hong SNG Chu MA Marcus MJ Schurman A Baca SJ Pearton CR Abernathy 1998 Appl Phys Lett 73 3893 10.1063/1.122927 1:CAS:528:DyaK1cXotVegurw%3D (Pubitemid 128674246)
- (1998) Applied Physics Letters , vol.73 , Issue.26 , pp. 3893-3895
- Ren, F.¹ Hong, M.² Chu, S.N.G.³ Marcus, M.A.⁴ Schurman, M.J.⁵ Baca, A.⁶ Pearton, S.J.⁷ Abernathy, C.R.⁸

31
- 33947318784
- 3) on GaN
- DOI 10.1016/j.jcrysgro.2006.11.259, PII S002202480601459X
- YC Chang YJ Lee YN Chiu TD Lin SY Wu HC Chiu J Kwo YH Wang M Hong 2007 J Cryst Growth 301 390 10.1016/j.jcrysgro.2006.11.259 (Pubitemid 46441133)
- (2007) Journal of Crystal Growth , vol.301-302 , Issue.SPEC. ISS. , pp. 390-393
- Chang, Y.C.¹ Lee, Y.J.² Chiu, Y.N.³ Lin, T.D.⁴ Wu, S.Y.⁵ Chiu, H.C.⁶ Kwo, J.⁷ Wang, Y.H.⁸ Hong, M.⁹

32
- 18444388307
- 3-GaN interfaces by X-ray photoelectron spectroscopy
- DOI 10.1016/j.jcrysgro.2004.12.128, PII S0022024804021098, 13th International Conference on Molecular Beam Epitaxy
- TS Lay YY Liao WH Hung M Hong J Kwo JP Mannaerts 2005 J Cryst Growth 278 624 10.1016/j.jcrysgro.2004.12.128 1:CAS:528:DC%2BD2MXjsVeks78%3D (Pubitemid 40643421)
- (2005) Journal of Crystal Growth , vol.278 , Issue.1-4 , pp. 624-628
- Lay, T.S.¹ Liao, Y.Y.² Hung, W.H.³ Hong, M.⁴ Kwo, J.⁵ Mannaerts, J.P.⁶

33
- 0035449019
- 3) interfaces
- DOI 10.1016/S0038-1101(01)00175-7, PII S0038110101001757
- TS Lay M Hong J Kwo JP Mannaerts WH Hung DJ Huang 2001 Solid-State Electron 45 1679 10.1016/S0038-1101(01)00175-7 1:CAS:528:DC%2BD3MXmslCntLk%3D (Pubitemid 32824920)
- (2001) Solid-State Electronics , vol.45 , Issue.9 , pp. 1679-1682
- Lay, T.S.¹ Hong, M.² Kwo, J.³ Mannaerts, J.P.⁴ Hung, W.H.⁵ Huang, D.J.⁶

34
- 63349096315
- 10.1016/j.jcrysgro.2008.10.079 1:CAS:528:DC%2BD1MXktFSnsrs%3D
- WH Chang CH Lee P Chang YC Chang YJ Lee J Kwo CC Tsai JM Hong CH Hsu M Hong 2009 J Cryst Growth 311 2183 10.1016/j.jcrysgro.2008.10.079 1:CAS:528:DC%2BD1MXktFSnsrs%3D
- (2009) J Cryst Growth , vol.311 , pp. 2183
- Chang, W.H.¹ Lee, C.H.² Chang, P.³ Chang, Y.C.⁴ Lee, Y.J.⁵ Kwo, J.⁶ Tsai, C.C.⁷ Hong, J.M.⁸ Hsu, C.H.⁹ Hong, M.¹⁰

35
- 0000168584
- Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs
- DOI 10.1002/1521-396X(200111)18 8:1<239::AID-PSSA239>3.0.CO;2-D
- BP Gila JW Johnson R Mehandru B Luo AH Onstine KK Allums V Krishnamoorthy S Bates CR Abernathy F Ren SJ Pearton 2001 Phys Stat Sol (a) 188 239 10.1002/1521-396X(200111)188:1<239::AID-PSSA239>3.0.CO;2-D 1:CAS:528:DC%2BD3MXptlemsrY%3D (Pubitemid 33700910)
- (2001) Physica Status Solidi (A) Applied Research , vol.188 , Issue.1 , pp. 239-242
- Gila, B.P.¹ Johnson, J.W.² Mehandru, R.³ Luo, B.⁴ Onstine, A.H.⁵ Allums, K.K.⁶ Krishnamoorthy, V.⁷ Bates, S.⁸ Abernathy, C.R.⁹ Ren, F.¹⁰ Pearton, S.J.¹¹

36
- 34249091763
- 3/MgO/GaN diodes
- DOI 10.1007/s11664-006-0035-y
- KK Allums M Hlad AP Gerger BP Gila CR Abernathy SJ Pearton F Ren R Dwivedi TN Fogarty R Wilkins 2007 J Electron Mater 36 519 10.1007/s11664-006- 0035-y 1:CAS:528:DC%2BD2sXntVKkt7c%3D (Pubitemid 46782242)
- (2007) Journal of Electronic Materials , vol.36 , Issue.4 , pp. 519-523
- Allums, K.K.¹ Hlad, M.² Gerger, A.P.³ Gila, B.P.⁴ Abernathy, C.R.⁵ Pearton, S.J.⁶ Ren, F.⁷ Dwivedi, R.⁸ Fogarty, T.N.⁹ Wilkins, R.¹⁰

37
- 60849125415
- 10.1143/JJAP.48.020224
- C Shih W Li S Shu C Hsiao K Hung 2009 Jpn J Appl Phys 48 020224 10.1143/JJAP.48.020224
- (2009) Jpn J Appl Phys , vol.48 , pp. 020224
- Shih, C.¹ Li, W.² Shu, S.³ Hsiao, C.⁴ Hung, K.⁵

38
- 76749169028
- 10.1149/1.3290679 1:CAS:528:DC%2BC3cXhvFehsrk%3D
- HJ Quah KY Cheong Z Hassan Z Lockman 2010 Electrochem Solid-State Lett 13 H116 10.1149/1.3290679 1:CAS:528:DC%2BC3cXhvFehsrk%3D
- (2010) Electrochem Solid-State Lett , vol.13 , pp. 116
- Quah, H.J.¹ Cheong, K.Y.² Hassan, Z.³ Lockman, Z.⁴

39
- 21844448357
- 10.1016/j.tsf.2004.11.240 1:CAS:528:DC%2BD2MXmtFCksL0%3D
- T Yamamoto H Momida T Hamada T Uda T Ohno 2005 Thin Solid Films 486 136 10.1016/j.tsf.2004.11.240 1:CAS:528:DC%2BD2MXmtFCksL0%3D
- (2005) Thin Solid Films , vol.486 , pp. 136
- Yamamoto, T.¹ Momida, H.² Hamada, T.³ Uda, T.⁴ Ohno, T.⁵

40
- 0042099398
- 10.1021/cr940055h 1:CAS:528:DyaK1cXjtlyhurk%3D
- G Adachi N Imanaka 1998 Chem Rev 98 1479 10.1021/cr940055h 1:CAS:528:DyaK1cXjtlyhurk%3D
- (1998) Chem Rev , vol.98 , pp. 1479
- Adachi, G.¹ Imanaka, N.²

41
- 0032686177
- 10.1016/S0040-6090(99)00120-0
- T Inoue Y Yamamoto M Satoh 1999 Thin Solid Films 343 594 10.1016/S0040-6090(99)00120-0
- (1999) Thin Solid Films , vol.343 , pp. 594
- Inoue, T.¹ Yamamoto, Y.² Satoh, M.³

42
- 33748304509
- A medium energy ion scattering and x-ray photoelectron spectroscopy study of physical vapor deposited thin cerium oxide films on Si(100)
- DOI 10.1063/1.2234820
- R Barnes D Starodub T Gustafsson E Garfunkel 2006 J Appl Phys 100 044103 10.1063/1.2234820 (Pubitemid 44327299)
- (2006) Journal of Applied Physics , vol.100 , Issue.4 , pp. 044103
- Barnes, R.¹ Starodub, D.² Gustafsson, T.³ Garfunkel, E.⁴

43
- 26044458187
- Deposition of cerium oxide films on Si (1 0 0) and glass substrates using the ESAVD method
- DOI 10.1016/j.jcrysgro.2005.07.034, PII S0022024805009127
- M Wei KL Choy 2005 J Cryst Growth 284 464 10.1016/j.jcrysgro.2005.07.034 1:CAS:528:DC%2BD2MXhtVyjtLnM (Pubitemid 41406315)
- (2005) Journal of Crystal Growth , vol.284 , Issue.3-4 , pp. 464-469
- Wei, M.¹ Choy, K.L.²

44
- 0032114641
- 10.1143/JJAP.37.4158 1:CAS:528:DyaK1cXltFSisbg%3D
- H Fukuda M Miura S Sakuma S Nomura 1998 Jpn J Appl Phys 37 4158 10.1143/JJAP.37.4158 1:CAS:528:DyaK1cXltFSisbg%3D
- (1998) Jpn J Appl Phys , vol.37 , pp. 4158
- Fukuda, H.¹ Miura, M.² Sakuma, S.³ Nomura, S.⁴

45
- 0035341933
- 2 dielectric thin films on Si(100) substrates using pulsed laser deposition
- DOI 10.1016/S0167-9317(00)00526-8, PII S0167931700005268
- J Kang X Liu G Lian Z Zhang G Xiong X Guan R Han Y Wang 2001 Microelectron Eng 56 191 10.1016/S0167-9317(00)00526-8 1:CAS:528: DC%2BD3MXislOntbc%3D (Pubitemid 32335362)
- (2001) Microelectronic Engineering , vol.56 , Issue.1-2 , pp. 191-194
- Kang, J.¹ Liu, X.² Lian, G.³ Zhang, Z.⁴ Xiong, G.⁵ Guan, X.⁶ Han, R.⁷ Wang, Y.⁸

46
- 55049127248
- 10.1016/j.tsf.2008.08.059 1:CAS:528:DC%2BD1cXhtlWlt7fE
- MT Ta D Briand Y Guhel J Bernard JC Pesant B Boudart 2008 Thin Solid Films 517 450 10.1016/j.tsf.2008.08.059 1:CAS:528:DC%2BD1cXhtlWlt7fE
- (2008) Thin Solid Films , vol.517 , pp. 450
- Ta, M.T.¹ Briand, D.² Guhel, Y.³ Bernard, J.⁴ Pesant, J.C.⁵ Boudart, B.⁶

47
- 0032666551
- 10.1016/S0022-0248(99)00058-5 1:CAS:528:DyaK1MXisV2ntL4%3D
- R Wang S Pan Y Zhou G Zhou N Liu K Xie H Lu 1999 J Cryst Growth 200 505 10.1016/S0022-0248(99)00058-5 1:CAS:528:DyaK1MXisV2ntL4%3D
- (1999) J Cryst Growth , vol.200 , pp. 505
- Wang, R.¹ Pan, S.² Zhou, Y.³ Zhou, G.⁴ Liu, N.⁵ Xie, K.⁶ Lu, H.⁷

48
- 10944272655
- 2 gate dielectrics
- DOI 10.1149/1.1819855, 3
- JC Wang KC Chiang TF Lei CL Lee 2004 Electrochem Solid-State Lett 7 E55 10.1149/1.1819855 1:CAS:528:DC%2BD2cXpslCit7Y%3D (Pubitemid 40015887)
- (2004) Electrochemical and Solid-State Letters , vol.7 , Issue.12
- Wang, J.C.¹ Chiang, K.C.² Lei, T.F.³ Lee, C.L.⁴

49
- 0032630359
- 10.1016/S0040-6090(98)01759-3 1:CAS:528:DyaK1MXjsFOku7Y%3D
- B Hirschauer G Chiaia M Gothelid UO Karlsson 1999 Thin Solid Films 348 3 10.1016/S0040-6090(98)01759-3 1:CAS:528:DyaK1MXjsFOku7Y%3D
- (1999) Thin Solid Films , vol.348 , pp. 3
- Hirschauer, B.¹ Chiaia, G.² Gothelid, M.³ Karlsson, U.O.⁴

50
- 34247585144
- Interface engineering for Ge metal-oxide-semiconductor devices
- DOI 10.1016/j.tsf.2006.11.129, PII S0040609006014465
- A Dimoulas DP Brunco S Ferrari JW Seo Y Panayiotatos A Sotiropoulos T Conard M Caymax S Spiga M Fanciulli Ch Dieker EK Evangelou S Galata M Houssa MM Heyns 2007 Thin Solid Films 515 6337 10.1016/j.tsf.2006.11.129 1:CAS:528:DC%2BD2sXkvFKqtLs%3D (Pubitemid 46671549)
- (2007) Thin Solid Films , vol.515 , Issue.16 SPEC. ISS. , pp. 6337-6343
- Dimoulas, A.¹ Brunco, D.P.² Ferrari, S.³ Seo, J.W.⁴ Panayiotatos, Y.⁵ Sotiropoulos, A.⁶ Conard, T.⁷ Caymax, M.⁸ Spiga, S.⁹ Fanciulli, M.¹⁰ Dieker, Ch.¹¹ Evangelou, E.K.¹² Galata, S.¹³ Houssa, M.¹⁴ Heyns, M.M.¹⁵

51
- 34547564665
- 2 bilayers on germanium
- DOI 10.1063/1.2756519
- DP Brunco A Dimoulas N Boukos M Houssa T Conard K Martens C Zhao F Bellenger M Caymax M Meuris MM Heyns 2007 J Appl Phys 102 024104 10.1063/1.2756519 (Pubitemid 47193066)
- (2007) Journal of Applied Physics , vol.102 , Issue.2 , pp. 024104
- Brunco, D.P.¹ Dimoulas, A.² Boukos, N.³ Houssa, M.⁴ Conard, T.⁵ Martens, K.⁶ Zhao, C.⁷ Bellenger, F.⁸ Caymax, M.⁹ Meuris, M.¹⁰ Heyns, M.M.¹¹

52
- 28344454999
- Size dependency variation in lattice parameter and valency states in nanocrystalline cerium oxide
- DOI 10.1063/1.2061873, 133113
- S Deshpande S Patil SV Kuchibhatia S Seal 2005 Appl Phys Lett 87 133113 10.1063/1.2061873 (Pubitemid 41717313)
- (2005) Applied Physics Letters , vol.87 , Issue.13 , pp. 1-3
- Deshpande, S.¹ Patil, S.² Kuchibhatla, S.V.³ Seal, S.⁴

53
- 33845742654
- 2 films on sapphire
- DOI 10.1016/j.physb.2006.06.162, PII S0921452606014864
- MY Chen XT Zu X Xiang HL Zhang 2007 Physica B 389 263 10.1016/j.physb.2006.06.162 1:CAS:528:DC%2BD2sXkvF2g (Pubitemid 46014079)
- (2007) Physica B: Condensed Matter , vol.389 , Issue.2 , pp. 263-268
- Chen, M.Y.¹ Zu, X.T.² Xiang, X.³ Zhang, H.L.⁴

54
- 0035884549
- 10.1103/PhysRevB.64.115108
- NV Skorodumova R Ahuja SI Simak A Abrikosov B Johansson BI Lundqvist 2001 Phys Rev B 64 115108 10.1103/PhysRevB.64.115108
- (2001) Phys Rev B , vol.64 , pp. 115108
- Skorodumova, N.V.¹ Ahuja, R.² Simak, S.I.³ Abrikosov, A.⁴ Johansson, B.⁵ Lundqvist, B.I.⁶

55
- 9744286976
- 10.1063/1.1811771 1:CAS:528:DC%2BD2cXptFehtL0%3D
- S Tsunekawa S Ito Y Kawazoe 2004 Appl Phys Lett 85 3845 10.1063/1.1811771 1:CAS:528:DC%2BD2cXptFehtL0%3D
- (2004) Appl Phys Lett , vol.85 , pp. 3845
- Tsunekawa, S.¹ Ito, S.² Kawazoe, Y.³

56
- 0033731053
- 10.1016/S0925-8388(00)00748-9 1:CAS:528:DC%2BD3cXktFWhu78%3D
- S Wang Z Qiao W Wang Y Qian 2000 J Alloys Comp 305 121 10.1016/S0925-8388(00)00748-9 1:CAS:528:DC%2BD3cXktFWhu78%3D
- (2000) J Alloys Comp , vol.305 , pp. 121
- Wang, S.¹ Qiao, Z.² Wang, W.³ Qian, Y.⁴

57
- 3242724239
- 10.1016/j.susc.2004.05.138 1:CAS:528:DC%2BD2cXlvFCksL0%3D
- F Zhang P Wang J Koberstein S Khalid S Chan 2004 Surf Sci 563 74 10.1016/j.susc.2004.05.138 1:CAS:528:DC%2BD2cXlvFCksL0%3D
- (2004) Surf Sci , vol.563 , pp. 74
- Zhang, F.¹ Wang, P.² Koberstein, J.³ Khalid, S.⁴ Chan, S.⁵

58
- 0035341541
- 2 thin films for gate dielectric applications
- DOI 10.1016/S0167-9317(00)00525-6, PII S0167931700005256
- JH Yoo SW Nam SK Kang YH Jeong DH Ko JH Ku HJ Lee 2001 Microelectron Eng 56 187 10.1016/S0167-9317(00)00525-6 1:CAS:528:DC%2BD3MXislOntbY%3D (Pubitemid 32335361)
- (2001) Microelectronic Engineering , vol.56 , Issue.1-2 , pp. 187-190
- Yoo, J.-H.¹ Nam, S.-W.² Kang, S.-K.³ Jeong, Y.-H.⁴ Ko, D.-H.⁵ Ku, J.-H.⁶ Lee, H.-J.⁷

59
- 41549131311
- Anomalous charge trapping dynamics in cerium oxide grown on germanium substrate
- DOI 10.1063/1.2901214
- MS Rahman EK Evangelou A Dimoulas G Mavrou S Galata 2008 J Appl Phys 103 064514 10.1063/1.2901214 (Pubitemid 351469658)
- (2008) Journal of Applied Physics , vol.103 , Issue.6 , pp. 064514
- Rahman, M.S.¹ Evangelou, E.K.² Dimoulas, A.³ Mavrou, G.⁴ Galata, S.⁵

60
- 33644915272
- 10.1016/j.tsf.2005.09.123 1:CAS:528:DC%2BD28Xit1ejsro%3D
- H Wong B Sen V Filip MC Poon 2006 Thin Solid Films 504 192 10.1016/j.tsf.2005.09.123 1:CAS:528:DC%2BD28Xit1ejsro%3D
- (2006) Thin Solid Films , vol.504 , pp. 192
- Wong, H.¹ Sen, B.² Filip, V.³ Poon, M.C.⁴

61
- 10844282779
- High dielectric constant oxides
- DOI 10.1051/epjap:2004206
- J Robertson 2004 Eur Phys J Appl Phys 28 265 10.1051/epjap:2004206 1:CAS:528:DC%2BD2MXhtFGgtrs%3D (Pubitemid 40002196)
- (2004) EPJ Applied Physics , vol.28 , Issue.3 , pp. 265-291
- Robertson, J.¹

62
- 0035872897
- 10.1063/1.1361065 1:CAS:528:DC%2BD3MXjt1eisrw%3D
- GD Wilk RM Wallance JM Anthony 2001 J Appl Phys 89 5243 10.1063/1.1361065 1:CAS:528:DC%2BD3MXjt1eisrw%3D
- (2001) J Appl Phys , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallance, R.M.² Anthony, J.M.³

63
- 17144457654
- 10.1016/j.tsf.2004.01.017
- H Ahn HW Chen D Landheer X Wu LJ Chou TS Chao 2004 Thin Solid Films 455 318 10.1016/j.tsf.2004.01.017
- (2004) Thin Solid Films , vol.455 , pp. 318
- Ahn, H.¹ Chen, H.W.² Landheer, D.³ Wu, X.⁴ Chou, L.J.⁵ Chao, T.S.⁶

64
- 56849087931
- 10.1557/mrs2008.221 1:CAS:528:DC%2BD1cXhsFCitbfK
- DG Schlom S Guha S Datta 2008 MRS Bull 33 1017 10.1557/mrs2008.221 1:CAS:528:DC%2BD1cXhsFCitbfK
- (2008) MRS Bull , vol.33 , pp. 1017
- Schlom, D.G.¹ Guha, S.² Datta, S.³

65
- 9544245843
- 10.1016/j.mssp.2004.09.122 1:CAS:528:DC%2BD2cXpvVeltLc%3D
- M Filipescu N Scarisoreanu DG Matei G Dinescu A Ferrari M Balucani O Toma C Ghica LC Nistor M Dinescu 2004 Mater Sci Semicond Process 7 209 10.1016/j.mssp.2004.09.122 1:CAS:528:DC%2BD2cXpvVeltLc%3D
- (2004) Mater Sci Semicond Process , vol.7 , pp. 209
- Filipescu, M.¹ Scarisoreanu, N.² Matei, D.G.³ Dinescu, G.⁴ Ferrari, A.⁵ Balucani, M.⁶ Toma, O.⁷ Ghica, C.⁸ Nistor, L.C.⁹ Dinescu, M.¹⁰

66
- 36348973641
- 2 gates
- DOI 10.1016/j.sse.2007.09.029, PII S0038110107003322, Papers Selected from the 36th European Solid-State Device Research Conference - ESSDERC'06
- A Dimoulas Y Panayiotatos A Sotiropoulos P Tsipas DP Brunco G Nicholas JV Steenbergen F Bellenger M Houssa M Caymax M Meuris 2007 Solid-State Electron 51 1508 10.1016/j.sse.2007.09.029 1:CAS:528:DC%2BD2sXhtlClsbjF (Pubitemid 350148203)
- (2007) Solid-State Electronics , vol.51 , Issue.11-12 , pp. 1508-1514
- Dimoulas, A.¹ Panayiotatos, Y.² Sotiropoulos, A.³ Tsipas, P.⁴ Brunco, D.P.⁵ Nicholas, G.⁶ Van Steenbergen, J.⁷ Bellenger, F.⁸ Houssa, M.⁹ Caymax, M.¹⁰ Meuris, M.¹¹

67
- 34247388523
- Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium
- DOI 10.1016/j.microrel.2007.01.023, PII S0026271407000297
- SF Galata EK Evangelou Y Panayiotatos A Sotiropoulas 2007 Microelectron Reliab 47 532 10.1016/j.microrel.2007.01.023 1:CAS:528:DC%2BD2sXksVGmt70%3D (Pubitemid 46628817)
- (2007) Microelectronics Reliability , vol.47 , Issue.4-5 SPEC. ISS. , pp. 532-535
- Galata, S.F.¹ Evangelou, E.K.² Panayiotatos, Y.³ Sotiropoulos, A.⁴ Dimoulas, A.⁵

68
- 0035276219
- 2 at MOVPE temperatures and pressures
- DOI 10.1016/S0022-0248(01)00617-0
- DD Koleske AE Wickenden RL Henry JC Culbertson ME Twigg 2001 J Cryst Growth 223 466 10.1016/S0022-0248(01)00617-0 1:CAS:528:DC%2BD3MXhvFChsL0%3D (Pubitemid 32264947)
- (2001) Journal of Crystal Growth , vol.223 , Issue.4 , pp. 466-483
- Koleske, D.D.¹ Wickenden, A.E.² Henry, R.L.³ Culbertson, J.C.⁴ Twigg, M.E.⁵

69
- 0036903688
- Surface analysis of GaN decomposition
- DOI 10.1088/0268-1242/17/12/304, PII S0268124202520307
- HW Choi MA Rana SJ Chua T Osipowicz JS Pan 2002 Semicond Sci Technol 17 1223 10.1088/0268-1242/17/12/304 1:CAS:528:DC%2BD3sXhvVyisQ%3D%3D (Pubitemid 35476527)
- (2002) Semiconductor Science and Technology , vol.17 , Issue.12 , pp. 1223-1225
- Choi, H.W.¹ Rana, M.A.² Chua, S.J.³ Osipowicz, T.⁴ Pan, J.S.⁵

70
- 0034739137
- 10.1016/S0040-6031(00)00558-X
- BV L'vov 2000 Thermochim Acta 360 85 10.1016/S0040-6031(00)00558-X
- (2000) Thermochim Acta , vol.360 , pp. 85
- L'Vov, B.V.¹

71
- 11044226374
- Influence of polarity on GaN thermal stability
- DOI 10.1016/j.jcrysgro.2004.09.091, PII S0022024804012266
- MA Mastro OM Kryliouk TJ Anderson A Davydov A Shapiro 2005 J Cryst Growth 274 38 10.1016/j.jcrysgro.2004.09.091 1:CAS:528:DC%2BD2MXjt12h (Pubitemid 40043226)
- (2005) Journal of Crystal Growth , vol.274 , Issue.1-2 , pp. 38-46
- Mastro, M.A.¹ Kryliouk, O.M.² Anderson, T.J.³ Davydov, A.⁴ Shapiro, A.⁵

72
- 58149473449
- 10.1088/0268-1242/23/12/125025
- A Bchetnia I Kemis A Toure W Fathallah T Boufaden BE Jani 2008 Semicond Sci Technol 23 125025 10.1088/0268-1242/23/12/125025
- (2008) Semicond Sci Technol , vol.23 , pp. 125025
- Bchetnia, A.¹ Kemis, I.² Toure, A.³ Fathallah, W.⁴ Boufaden, T.⁵ Jani, B.E.⁶

73
- 0006250943
- 10.1149/1.2401694 1:CAS:528:DyaE2cXls1Siurs%3D
- Y Morimoto 1974 J Electrochem Soc 121 1383 10.1149/1.2401694 1:CAS:528:DyaE2cXls1Siurs%3D
- (1974) J Electrochem Soc , vol.121 , pp. 1383
- Morimoto, Y.¹

74
- 0035933172
- Gallium droplet formation during MOVPE and thermal annealing of GaN
- DOI 10.1016/S0921-5107(00)00784-4, PII S0921510700007844
- SY Karpov OV Bord RA Talalaev YN Makarov 2001 Mater Sci Eng B 82 22 10.1016/S0921-5107(00)00784-4 (Pubitemid 32420873)
- (2001) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.82 , Issue.1-3 , pp. 22-24
- Karpov, S.Yu.¹ Bord, O.V.² Talalaev, R.A.³ Makarov, Yu.N.⁴

75
- 65749119205
- 10.1016/j.jcrysgro.2009.01.096 1:CAS:528:DC%2BD1MXms1ajt7k%3D
- H Suzuki R Togashi H Murakami Y Kumagai A Koukitu 2009 J Cryst Growth 311 3103 10.1016/j.jcrysgro.2009.01.096 1:CAS:528:DC%2BD1MXms1ajt7k%3D
- (2009) J Cryst Growth , vol.311 , pp. 3103
- Suzuki, H.¹ Togashi, R.² Murakami, H.³ Kumagai, Y.⁴ Koukitu, A.⁵

76
- 0032474179
- 10.1016/S0022-0248(98)00006-2 1:CAS:528:DyaK1cXjtVaksro%3D
- A Pisch R Schmid-Fetzer 1998 J Cryst Growth 187 329 10.1016/S0022- 0248(98)00006-2 1:CAS:528:DyaK1cXjtVaksro%3D
- (1998) J Cryst Growth , vol.187 , pp. 329
- Pisch, A.¹ Schmid-Fetzer, R.²

77
- 36449008513
- 10.1063/1.357133 1:CAS:528:DyaK2cXls1CksLs%3D
- CJ Sun P Kung A Saxler H Ohsato E Bigan M Razeghi DK Gaskill 1994 J Appl Phys 76 236 10.1063/1.357133 1:CAS:528:DyaK2cXls1CksLs%3D
- (1994) J Appl Phys , vol.76 , pp. 236
- Sun, C.J.¹ Kung, P.² Saxler, A.³ Ohsato, H.⁴ Bigan, E.⁵ Razeghi, M.⁶ Gaskill, D.K.⁷

78
- 41449105570
- 10.1016/j.jcrysgro.2007.11.167 1:CAS:528:DC%2BD1cXktlWqu7w%3D
- H Suzuki R Togashi H Murakami Y Kumagai A Koukitu 2008 J Cryst Growth 310 1632 10.1016/j.jcrysgro.2007.11.167 1:CAS:528:DC%2BD1cXktlWqu7w%3D
- (2008) J Cryst Growth , vol.310 , pp. 1632
- Suzuki, H.¹ Togashi, R.² Murakami, H.³ Kumagai, Y.⁴ Koukitu, A.⁵

79
- 2742564942
- 10.1039/a904987h 1:CAS:528:DyaK1MXotFertLg%3D
- L Triguero S Carolis M Baudin M Wojcik K Hermansson MA Nygren LGM Pettersson 1999 Faraday Discuss 114 351 10.1039/a904987h 1:CAS:528: DyaK1MXotFertLg%3D
- (1999) Faraday Discuss , vol.114 , pp. 351
- Triguero, L.¹ Carolis, S.² Baudin, M.³ Wojcik, M.⁴ Hermansson, K.⁵ Nygren, M.A.⁶ Pettersson, L.G.M.⁷

80
- 72249116542
- 10.1149/1.3244214 1:CAS:528:DC%2BD1MXhsFagtbrN
- HJ Quah KY Cheong Z Hassan Z Lockman FA Jasni WF Lim 2010 J Electrochem Soc 157 H6 10.1149/1.3244214 1:CAS:528:DC%2BD1MXhsFagtbrN
- (2010) J Electrochem Soc , vol.157 , pp. 6
- Quah, H.J.¹ Cheong, K.Y.² Hassan, Z.³ Lockman, Z.⁴ Jasni, F.A.⁵ Lim, W.F.⁶

81
- 28444482416
- 10.1007/s11661-005-0089-0
- J Pelleg E Elish D Mogilyanski 2005 Metal Mater Trans A 36 3187 10.1007/s11661-005-0089-0
- (2005) Metal Mater Trans A , vol.36 , pp. 3187
- Pelleg, J.¹ Elish, E.² Mogilyanski, D.³

82
- 37849052478
- 10.1007/s10853-007-2300-8 1:CAS:528:DC%2BD1cXjtVyjsw%3D%3D
- V Biju N Sugathan V Vrinda SL Salini 2008 J Mater Sci 43 1175 10.1007/s10853-007-2300-8 1:CAS:528:DC%2BD1cXjtVyjsw%3D%3D
- (2008) J Mater Sci , vol.43 , pp. 1175
- Biju, V.¹ Sugathan, N.² Vrinda, V.³ Salini, S.L.⁴

83
- 0142087594
- 10.1116/1.1601610 1:CAS:528:DC%2BD3sXntV2itro%3D
- I Petrov PB Barna L Hultman JE Greene 2003 J Vac Sci Technol A 21 S117 10.1116/1.1601610 1:CAS:528:DC%2BD3sXntV2itro%3D
- (2003) J Vac Sci Technol A , vol.21 , pp. 117
- Petrov, I.¹ Barna, P.B.² Hultman, L.³ Greene, J.E.⁴

84
- 0041696495
- 10.1016/S0925-4005(03)00330-7
- N Izu W Shin I Matsubara N Murayama 2003 Sens Actuators B 94 222 10.1016/S0925-4005(03)00330-7
- (2003) Sens Actuators B , vol.94 , pp. 222
- Izu, N.¹ Shin, W.² Matsubara, I.³ Murayama, N.⁴

85
- 0037078667
- 10.1103/PhysRevLett.89.166601 1:STN:280:DC%2BD38njvFCisw%3D%3D
- NV Skorodumova SI Simak BI Lundquast IA Abrikosov B Johansson 2002 Phys Rev Lett 89 166601 10.1103/PhysRevLett.89.166601 1:STN:280: DC%2BD38njvFCisw%3D%3D
- (2002) Phys Rev Lett , vol.89 , pp. 166601
- Skorodumova, N.V.¹ Simak, S.I.² Lundquast, B.I.³ Abrikosov, I.A.⁴ Johansson, B.⁵

86
- 0035278825
- High-quality oxide/nitride/oxide gate insulator for GaN MIS structures
- DOI 10.1109/16.906436, PII S0018938301014538
- B Gaffey LJ Guido XW Wang TP Ma 2001 IEEE Trans Electron Devices 48 458 10.1109/16.906436 1:CAS:528:DC%2BD3MXit1Ojt7o%3D (Pubitemid 32271159)
- (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.3 , pp. 458-464
- Gaffey, B.¹ Guido, L.J.² Wang, X.W.³ Ma, T.P.⁴

87
- 0004071496
- 2 Wiley New York
- D.K. Schroder, Semiconductor Material and Device Characterization, 2nd edn. (Wiley, New York, 1998), pp. 337-419
- (1998) Semiconductor Material and Device Characterization , pp. 337-419
- Schroder, D.K.¹

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