SCOPUS 정보 검색 플랫폼

Journal of Materials Science: Materials in Electronics

Volumn 22, Issue 2, 2011, Pages 143-150

Oxidation of sputtered Zr thin film on Si substrate

(5) Kurniawan, Tedi a Cheong, Kuan Yew a Razak, Khairunisak Abdul a Lockman, Zainovia a Ahmad, Nuruddin b

a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING (Malaysia)

b BANDUNG INSTITUTE OF TECHNOLOGY (Indonesia)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; CAPACITANCE-VOLTAGE CURVE; CROSS SECTIONAL IMAGE; DIELECTRIC BREAKDOWN VOLTAGES; EFFECTIVE DIELECTRIC CONSTANTS; ELECTRICAL CHARACTERIZATION; FLAT-BAND VOLTAGE; INTERFACIAL LAYER; MASS SPECTROSCOPY; NEGATIVE BIAS; OXIDATION TIME; PHYSICAL MODEL; SI SUBSTRATES; TIME OF FLIGHT; VIBRATION MODES;

ELECTRIC BREAKDOWN; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; MASS SPECTROMETRY; OXIDATION; PERMITTIVITY; SILICON; THIN FILMS; ZIRCONIUM; ZIRCONIUM ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79952186826 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-010-0103-1 Document Type: Article

Times cited : (24)

References (29)

1
- 84864170956
- ITRS 2008 UPDATE (2009) Available from World Wide Web: (Online;Accessed12thMay2009)
- ITRS 2008 UPDATE (2009) Available from World Wide Web: http://www.itrs.net/Links/2008ITRS/Home2008.htm (Online; Accessed 12th May 2009)

2
- 79952192367
- RM Wallace G Wilk 2002 MRS Bull. March 192 247
- (2002) MRS Bull. March , vol.192 , pp. 247
- Wallace, R.M.¹ Wilk, G.²

3
- 33749268352
- High-k gate oxide for silicon heterostructure MOSFET devices
- DOI 10.1007/s10854-006-0015-2
- SK Ray R Mahapatra S Maikap 2006 J. Mat. Sci. Mat. Electron. 17 689 1:CAS:528:DC%2BD28XhtVWlu73O 10.1007/s10854-006-0015-2 (Pubitemid 44479956)
- (2006) Journal of Materials Science: Materials in Electronics , vol.17 , Issue.9 , pp. 689-710
- Ray, S.K.¹ Mahapatra, R.² Maikap, S.³

4
- 33746862976
- 1:CAS:528:DC%2BD28XlvFGis7k%3D 10.1016/j.mee.2006.01.271
- H Wong H Iwai 2006 Microelectron. Eng. 83 1867 1:CAS:528: DC%2BD28XlvFGis7k%3D 10.1016/j.mee.2006.01.271
- (2006) Microelectron. Eng. , vol.83 , pp. 1867
- Wong, H.¹ Iwai, H.²

5
- 29444432653
- 2/Si by reactive magnetron sputtering
- DOI 10.1016/j.matlet.2005.10.039, PII S0167577X05010141
- LQ Zhu Q Fang G He M Liu LD Zhang 2006 Mater. Letts. 60 888 1:CAS:528:DC%2BD28Xkt1ar 10.1016/j.matlet.2005.10.039 (Pubitemid 43012005)
- (2006) Materials Letters , vol.60 , Issue.7 , pp. 888-891
- Zhu, L.Q.¹ Fang, Q.² He, G.³ Liu, M.⁴ Zhang, L.D.⁵

6
- 0037024046
- 2 thin films by atomic layer deposition: Growth kinetics, structural and electrical properties
- DOI 10.1016/S0169-4332(02)00247-7, PII S0169433202002477
- M Cassir F Goubin C Bernay P Vernoux D Lincot 2002 Appl. Surf. Sci. 193 120 1:CAS:528:DC%2BD38XltFShsLo%3D 10.1016/S0169-4332(02)00247-7 (Pubitemid 34807866)
- (2002) Applied Surface Science , vol.193 , Issue.1-4 , pp. 120-128
- Cassir, M.¹ Goubin, F.² Bernay, C.³ Vernoux, P.⁴ Lincot, D.⁵

7
- 34447319928
- High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices
- DOI 10.1016/j.apsusc.2007.02.166, PII S0169433207003650, Photon-Assisted Synthesis and Processing of Functional Materials
- M Filipescu N Scarisoreanu V Craciun B Mitu A Purice A Moldovan V Iona O Toma M Dinescu 2007 Appl. Surf. Sci. 253 8184 1:CAS:528:DC%2BD2sXnvFyqsL8%3D 10.1016/j.apsusc.2007.02.166 (Pubitemid 47058747)
- (2007) Applied Surface Science , vol.253 , Issue.19 , pp. 8184-8191
- Filipescu, M.¹ Scarisoreanu, N.² Craciun, V.³ Mitu, B.⁴ Purice, A.⁵ Moldovan, A.⁶ Ion, V.⁷ Toma, O.⁸ Dinescu, M.⁹

8
- 0037399773
- 1:CAS:528:DC%2BD3sXhtlyisLo%3D 10.1016/S0022-0248(03)00827-3
- X Wu D Landheer MJ Graham HW Chen TY Huang TS Chao 2003 J. Crystal Growth 250 479 1:CAS:528:DC%2BD3sXhtlyisLo%3D 10.1016/S0022-0248(03)00827-3
- (2003) J. Crystal Growth , vol.250 , pp. 479
- Wu, X.¹ Landheer, D.² Graham, M.J.³ Chen, H.W.⁴ Huang, T.Y.⁵ Chao, T.S.⁶

9
- 0037185136
- Formation of stable zirconium oxide on silicon by photo-assisted sol-gel processing
- DOI 10.1016/S0169-4332(01)00624-9, PII S0169433201006249
- JJ Yu J-Y Zhang IW Boyd 2002 Appl. Surf. Sci. 186 190 1:CAS:528:DC%2BD38XitFarsLw%3D 10.1016/S0169-4332(01)00624-9 (Pubitemid 34231938)
- (2002) Applied Surface Science , vol.186 , Issue.1-4 , pp. 190-194
- Yu, J.J.¹ Zhang, J.-Y.² Boyd, I.W.³

10
- 33748743891
- 2 high-k gate oxide in MOS devices
- DOI 10.1016/j.tsf.2005.12.287, PII S0040609005026179
- HD Kim SW Jeong MT You Y Roh 2006 Thin Solid Films 515 522 1:CAS:528:DC%2BD28XpvF2hurc%3D 10.1016/j.tsf.2005.12.287 (Pubitemid 44402619)
- (2006) Thin Solid Films , vol.515 , Issue.2 SPEC. ISS. , pp. 522-525
- Kim, H.D.¹ Jeong, S.-W.² You, M.T.³ Roh, Y.⁴

11
- 79955986464
- 2
- DOI 10.1063/1.1458692
- M Gutowski JE Jaffe CC Liu M Stoker RI Hegde RS Rai PJ Tobin 2002 Appl. Phys. Lett. 80 1897 1:CAS:528:DC%2BD38XhvFOkur0%3D 10.1063/1.1458692 (Pubitemid 34326232)
- (2002) Applied Physics Letters , vol.80 , Issue.11 , pp. 1897
- Gutowski, M.¹ Jaffe, J.E.² Liu, C.-L.³ Stoker, M.⁴ Hegde, R.I.⁵ Rai, R.S.⁶ Tobin, P.J.⁷

12
- 26444437825
- 2 thin films and Si substrates
- DOI 10.1016/j.vacuum.2005.05.004, PII S0042207X0500206X
- HS Choi KS Seol DY Kim JS Kwak CS Son I-H Choi 2005 Vacuum 80 310 1:CAS:528:DC%2BD2MXhtVyntbvL 10.1016/j.vacuum.2005.05.004 (Pubitemid 41423529)
- (2005) Vacuum , vol.80 , Issue.4 , pp. 310-316
- Choi, H.S.¹ Seol, K.S.² Kim, D.Y.³ Kwak, J.S.⁴ Son, C.-S.⁵ Choi, I.-H.⁶

13
- 0035894001
- Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
- DOI 10.1063/1.1417991
- A Callegari E Cartier M Gribelyuk HF Okorn-Schmidt T Zabel 2001 J. Appl. Phys. 90 6466 1:CAS:528:DC%2BD3MXoslKmsbc%3D 10.1063/1.1417991 (Pubitemid 34046824)
- (2001) Journal of Applied Physics , vol.90 , Issue.12 , pp. 6466
- Callegari, A.¹ Cartier, E.² Gribelyuk, M.³ Okorn-Schmidt, H.F.⁴ Zabel, T.⁵

14
- 34547885050
- 2 from deposited Zr metal during thermal oxidation
- DOI 10.1143/JJAP.45.7680
- L-Z Hsieh H-H Ko P-Y Kuei C-Y Lee 2006 Jap. J. Appl. Phys. 45 7680 1:CAS:528:DC%2BD28XhtFGiu7rE 10.1143/JJAP.45.7680 (Pubitemid 47253309)
- (2006) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.45 , Issue.10 A , pp. 7680-7681
- Hsieh, L.-Z.¹ Ko, H.-H.² Kuei, P.-Y.³ Lee, C.-Y.⁴

15
- 15544374243
- 22/Si structure using metal deposition followed by oxygen annealing
- DOI 10.1143/JJAP.44.5
- Y Nagasato A Aya Y Iwazaki M Hasumi 2005 Jap. J. Appl. Phys. 44 5 1:CAS:528:DC%2BD2MXhtlOktL0%3D 10.1143/JJAP.44.5 (Pubitemid 40401501)
- (2005) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.44 , Issue.1 A , pp. 5-7
- Nagasato, Y.¹ Aya, T.² Iwazaki, Y.³ Hasumi, M.⁴ Ueno, T.⁵ Kuroiwa, K.⁶

16
- 0033896278
- 10.1111/j.1151-2916.2000.tb01243.x
- FD Monte W Larsen JD Mackenzie 2000 J. Am. Ceram. Soc. 83 628 10.1111/j.1151-2916.2000.tb01243.x
- (2000) J. Am. Ceram. Soc. , vol.83 , pp. 628
- Monte, F.D.¹ Larsen, W.² MacKenzie, J.D.³

17
- 34249101977
- 2) films fabricated by plasma-assisted cathodic arc deposition
- DOI 10.1088/0022-3727/40/8/S08, PII S0022372707296366, S08
- W Li X Liu A Huang PK Chu 2007 J. Appl. Phys. D 40 2293 1:CAS:528:DC%2BD2sXltFegtL8%3D 10.1088/0022-3727/40/8/S08 (Pubitemid 46778354)
- (2007) Journal of Physics D: Applied Physics , vol.40 , Issue.8 , pp. 2293-2299
- Li, W.¹ Liu, X.² Huang, A.³ Chu, P.K.⁴

18
- 79952192620
- Characterization
- G.C. Schwartz K.V. Srikrishnam A. Bross (eds). Marcel Dekker New York
- G.C. Schwartz, Characterization, in Handbook of semiconductor interconnection technology, ed. by G.C. Schwartz, K.V. Srikrishnam, A. Bross (Marcel Dekker, New York, 1998)
- (1998) Handbook of Semiconductor Interconnection Technology
- Schwartz, G.C.¹

19
- 34248645441
- Phase stability of hafnium oxide and zirconium oxide on silicon substrate
- DOI 10.1016/j.scriptamat.2007.04.011, PII S1359646207002837
- D Shin Z-K Liu 2007 Scripta Mater. 57 201 1:CAS:528:DC%2BD2sXlslWksLs%3D 10.1016/j.scriptamat.2007.04.011 (Pubitemid 46771295)
- (2007) Scripta Materialia , vol.57 , Issue.3 , pp. 201-204
- Shin, D.¹ Liu, Z.-K.²

20
- 0004071496
- 2 Wiley New York
- D.K. Schroder, Semiconductor material and device characterization, 2nd edn. (Wiley, New York, 1998)
- (1998) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

21
- 33846086952
- Effects of thermal nitrided gate-oxide thickness on 4H silicon-carbide- based metal-oxide-semiconductor characteristics
- DOI 10.1063/1.2430308
- KY Cheong W Bahng NK Kim 2007 Appl. Phys. Lett. 90 012120 10.1063/1.2430308 (Pubitemid 46068333)
- (2007) Applied Physics Letters , vol.90 , Issue.1 , pp. 012120
- Cheong, K.Y.¹ Bahng, W.² Kim, N.-K.³

22
- 79952185087
- PG Tanner S Dimitrijev HB Harrison 2006 Optoelectron. Microelectron. Mat. Dev. Proc. 21 1 214
- (2006) Optoelectron. Microelectron. Mat. Dev. Proc. , vol.21 , pp. 1-214
- Tanner, P.G.¹ Dimitrijev, S.² Harrison, H.B.³

23
- 0035127986
- 2 gate dielectric stacks
- DOI 10.1088/0268-1242/16/1/306
- M Houssa M Naili C Zhao H Bender MM Heyns A Stesmans 2001 Semicond. Sci. Technol. 16 31 1:CAS:528:DC%2BD3MXns1aisw%3D%3D 10.1088/0268-1242/16/1/306 (Pubitemid 32136019)
- (2001) Semiconductor Science and Technology , vol.16 , Issue.1 , pp. 31-38
- Houssa, M.¹ Naili, M.² Zhao, C.³ Bender, H.⁴ Heyns, M.M.⁵ Stesmans, A.⁶

24
- 34547400989
- 2 thin films
- DOI 10.1016/j.apsusc.2007.04.054, PII S0169433207006459
- CY Ma F Lapostolle P Briois QY Zhang 2007 Appl. Surf. Sci. 253 8718 1:CAS:528:DC%2BD2sXosFent7g%3D 10.1016/j.apsusc.2007.04.054 (Pubitemid 47161096)
- (2007) Applied Surface Science , vol.253 , Issue.21 , pp. 8718-8724
- Ma, C.Y.¹ Lapostolle, F.² Briois, P.³ Zhang, Q.Y.⁴

25
- 17444428140
- Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering
- DOI 10.1007/s00339-003-2483-z
- J Wang L Zhao NH Luu D Wang H Nakashima 2005 Appl. Phys. A Mat. Sci. Process. 80 1781 1:CAS:528:DC%2BD2MXisl2rtb4%3D 10.1007/s00339-003-2483-z (Pubitemid 40536753)
- (2005) Applied Physics A: Materials Science and Processing , vol.80 , Issue.8 , pp. 1781-1787
- Wang, J.¹ Zhao, L.² Luu, N.H.³ Wang, D.⁴ Nakashima, H.⁵

26
- 33846562406
- Correlation between defects, leakage currents and conduction mechanism in advanced high-k dielectric layers
- ed. by E. Gusev (Springer, Dordrecht
- A. Paskaleva, E. Atanassova, M. Lemberger, A.J. Bauer, Correlation between defects, leakage currents and conduction mechanism in advanced high-k dielectric layers, in Defects in High-k Gate Dielectric Stacks Nano-Electric Semiconductor Devices, ed. by E. Gusev (Springer, Dordrecht, 2006), pp. S.411-S.422
- (2006) Defects in High-k Gate Dielectric Stacks Nano-Electric Semiconductor Devices
- Paskaleva, A.¹ Atanassova, E.² Lemberger, M.³ Bauer, A.J.⁴

27
- 79952186267
- X. Yang, Q. Xie, M. Tao, Mat. Res. Soc. Symp. Proc. 811, D2.8.1 (2004)
- (2004) Mat. Res. Soc. Symp. Proc. , vol.811
- Yang, X.¹ Xie, Q.² Tao, M.³

28
- 10944272655
- 2 gate dielectrics
- DOI 10.1149/1.1819855, 3
- JC Wang KC Chiang TF Lie CL Lee 2004 Electrochem. Solid-State Lett. 7 E55 1:CAS:528:DC%2BD2cXpslCit7Y%3D 10.1149/1.1819855 (Pubitemid 40015887)
- (2004) Electrochemical and Solid-State Letters , vol.7 , Issue.12
- Wang, J.C.¹ Chiang, K.C.² Lei, T.F.³ Lee, C.L.⁴

29
- 38049153029
- 1:CAS:528:DC%2BD2sXjsFGisA%3D%3D 10.1088/0022-3727/39/24/027
- LQ Zhu Q Fang G He M Liu LD Zhang 2006 J. Phys. D Appl. Phys. 39 5285 1:CAS:528:DC%2BD2sXjsFGisA%3D%3D 10.1088/0022-3727/39/24/027
- (2006) J. Phys. D Appl. Phys. , vol.39 , pp. 5285
- Zhu, L.Q.¹ Fang, Q.² He, G.³ Liu, M.⁴ Zhang, L.D.⁵

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