Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer

Chinese Physics

Volumn 15, Issue 8, 2006, Pages 1879-1882

  Chen, Wei Bing ^a   Xu, Jing Ping ^a   Lai, Pui To ^b   Li, Yan Ping ^a   Xu, Sheng Guo ^a   Chan, Chu Lok ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Capacitance voltage characteristics; HfTiON; Interlayer; Leakage current; Metal oxide semiconductor capacitors

Indexed keywords

ANNEALING; CAPACITANCE; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; HAFNIUM ALLOYS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITROGEN; SILICON;

CAPACITANCE-VOLTAGE CHARACTERISTICS; HFTION; INTERLAYER; NITRIDATION;

MOS CAPACITORS;

EID: 33746590327     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/15/8/041     Document Type: Article

References (22)

1. Gusev E P, Carier E, Buchanan D A, Gribelyuk M, Copel M, Okorn-Schmidt H and Emic C D 2001 Microelectron. Eng. 59 341
2. Wilk G D and Wallace R M 1999 Appl. Phys. Lett. 74 2854
3. Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
4. Lee B H, Kang L, Nieh R, Qi W J and Lee J C 2000 Appl. Phys. Lett. 76 1926
5. Yamamoto K, Hayashi S, Niwa M, Asai M, Horii S and Miya H 2003 Appl. Phys. Lett. 83 2229
6. Sayan S, Aravamudhan S and Busch B W 2002 J. Vac. Sci. Technol. A 20 507
7. Campbell S A, Ma T Z and Smith R 2001 Microelectron. Eng. 59 361
8. Zhu W, Ma T P and Tamagawa T 2001 IEDM Tech Digest 463
9. Xu J P, Li C X and Wu H P 2005 Acta Phys. Sin. 54 2918
10. Liu H X, Hao Y, Hawkins I D and Peaker A R 2005 Chin. Phys. 14 1644
11. Qi W J, Nieh R, Lee B H, Kang L, Jeon Y and Lee J C 2000 Appl. Phys. Lett. 77 3269
12. Akbar M S, Gopalan S, Cho H J, Onishi K, Choi R, Nieh R, Kang C S, Kim Y H, Han J, Krishnan S and Lee J C 2003 Appl. Phys. Lett. 82 1757
13. Visokay M R, Chambers J J, Rotondaro A L P, Shanware A and Colombo L 2002 Appl. Phys. Lett. 80 3183
14. Quevedo-Lopez M A, El-Bouanani M, Gnade B E, Wallace R M, Visokay M R, Douglas M, Bevan M J and Colombo L 2002 J. Appl. Phys. 97 3540
15. Puthenkovilakam R, Carter E A and Chang J P 2004 Phys. Rev. B 69 155329
16. Rhee S J, Kang C S and Choi C H 2004 IEDM Tech Digest 837-840
17. Fang Q, Zhang J Y and Wang Z M 2003 Thin Solid Films 428 263
18. Honda K, Skaki A and Sakashita M 2004 Japan. J. Appl. Phys. 43 A 1571
19. Arora N 1993 MOSFET Models for VLSI Circuit Simulation Theory and Practice (New York: Springer) p418 - 421
20. Lai P T, Xu J P, Li C X and Chan C L 2005 Appl. Phys. A 81 159
21. Hori T, Iwasaki H, Naito Y and Esaki H 1987 IEEE Trans. Electron Devices 34 2238
22. Bhat M, Kim J, Yan J, Yoon G W, Han L K and Kwong D L 1994 IEEE Electron Device Lett. 15 421