Current transport and high-field reliability of aluminum/hafnium oxide/silicon structure

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 312-316

  Sen, Banani ^a   Wong, Hei ^a   Filip, V ^a   Choi, H Y ^a   Sarkar, C K ^b   Chan, M ^c   Kok, C W ^c   Poon, M C ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b JADAVPUR UNIVERSITY   (India)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Barrier lowering; Charge trapping; Hafnium oxide; Interface oxide

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; HAFNIUM; IONIZATION; SILICON; THIN FILMS;

BARRIER LOWERING; CHARGE TRAPPING; HAFNIUM OXIDE; INTERFACE OXIDES;

ELECTRIC CURRENTS;

EID: 33644885425     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.052     Document Type: Conference Paper

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