Physical and electrical properties of yttrium oxide gate dielectrics on Si substrate with NH3 plasma treatment

Journal of the Electrochemical Society

Volumn 154, Issue 8, 2007, Pages

  Pan, Tung Ming ^a   Lee, Jian Der ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; LEAKAGE CURRENTS; SILICON; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM OXIDE;

FILM QUALITIES; FREQUENCY DEPENDENCE; PLASMA TREATMENT; TEMPERATURE DEPENDENCE;

GATE DIELECTRICS;

EID: 34347366326     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2742808     Document Type: Article

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