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Volumn 17, Issue 19, 2005, Pages 4808-4814

Atomic layer deposition of y 2O 3 thin films from yttrium tris(N,N′-diisopropylacetamidinate) and water

Author keywords

[No Author keywords available]

Indexed keywords

AIR-EXPOSED FILMS; ATOMIC LAYER DEPOSITION (ALD); NANOSCALE DEVICES; VOLATILE;

EID: 25844467841     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm050624+     Document Type: Article
Times cited : (153)

References (34)
  • 22
    • 0000836443 scopus 로고    scopus 로고
    • Nalwa, H. S., Ed.; Academic Press: San Diego
    • Ritala, M.; Leskela, M. In Handbook of Thin Film Materials; Nalwa, H. S., Ed.; Academic Press: San Diego, 2001; Vol 1, pp 103-159.
    • (2001) Handbook of Thin Film Materials , vol.1 , pp. 103-159
    • Ritala, M.1    Leskela, M.2
  • 26
    • 25844524169 scopus 로고    scopus 로고
    • Lanthanum aluminum oxide and praseodymium aluminum oxide [abstract]
    • Materials Research Society: Warrendale, PA
    • Rahtu, A.; de Rouffignac, P.; Gordon, R. Lanthanum Aluminum Oxide and Praseodymium Aluminum Oxide [abstract]. In Atomic Layer Deposition (ALD) of High-K Dielectrics; Materials Research Society: Warrendale, PA, 2005; Vol 811.
    • (2005) Atomic Layer Deposition (ALD) of High-K Dielectrics , vol.811
    • Rahtu, A.1    De Rouffignac, P.2    Gordon, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.