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Volumn 150, Issue 5, 2003, Pages

Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon

(5) Niu, D a Ashcraft, R W a Chen, Z b Stemmer, S b Parsons, G N a

a North Carolina State University (United States)

b Rice University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ELECTRON ENERGY LOSS SPECTROSCOPY; FLUORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYSTERESIS; INTERFACES (MATERIALS); PHYSICAL PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM COMPOUNDS;

CAPACITANCE-VOLTAGE DATA; OXYGEN PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION; POSTDEPOSITION ANNEALING; YTTRIUM DIKETONATE; YTTRIUM OXIDE;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0037502854 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1566415 Document Type: Article

Times cited : (32)

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