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Volumn 400, Issue 1-2, 2001, Pages 106-110
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Yttrium sesquioxide, Y2O3, thin films deposited on Si by ion beam sputtering: Microstructure and dielectric properties
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Author keywords
Dielectric; Oxides; Stress; Thin films; Y2O3
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Indexed keywords
ANNEALING;
DIELECTRIC PROPERTIES;
DIFFUSION;
FILM GROWTH;
ION BEAM ASSISTED DEPOSITION;
MICROSTRUCTURE;
MOSFET DEVICES;
SPUTTER DEPOSITION;
STRESS RELAXATION;
TRANSMISSION ELECTRON MICROSCOPY;
YTTRIUM COMPOUNDS;
ION BEAM SPUTTERING;
THIN FILMS;
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EID: 0035803181
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(01)01468-7 Document Type: Conference Paper |
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Times cited : (44)
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References (7)
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