Electrical properties of Y2O3 high-κ gate dielectric on Si(001): The influence of postmetallization annealing

Journal of Applied Physics

Volumn 93, Issue 7, 2003, Pages 3982-3989

  Ioannou Sougleridis, V ^a   Vellianitis, G ^b   Dimoulas, A ^b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; PERMITTIVITY; SILICON; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

INSULATOR TRAPS;

YTTRIUM COMPOUNDS;

EID: 0037394396     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1558965     Document Type: Article

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