Current conduction mechanisms in atomic-layer-deposited HfO2 /nitrided SiO2 stacked gate on 4H silicon carbide

Journal of Applied Physics

Volumn 103, Issue 8, 2008, Pages

  Cheong, Kuan Yew ^a   Moon, Jeong Hyun ^b   Kim, Hyeong Joon ^b   Bahng, Wook ^c   Kim, Nam Kyun ^c  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^b Seoul National University   (South Korea)

^c Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; FIELD EMISSION; HAFNIUM COMPOUNDS; SILICON CARBIDE; VOLTAGE MEASUREMENT;

CONDUCTION MECHANISMS; HIGH-FREQUENCY CAPACITANCE-VOLTAGE MEASUREMENTS; POOLE-FRENKEL EMISSION; SCHOTTKY EMISSION;

HEAT CONDUCTION;

EID: 43049147116     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2908870     Document Type: Article

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