Comparison of metal-organic decomposed (MOD) cerium oxide (CeO2) gate deposited on GaN and SiC substrates

Journal of Crystal Growth

Volumn 326, Issue 1, 2011, Pages 2-8

  Quah, H J ^a   Lim, W F ^a   Cheong, K Y ^a   Hassan, Z ^b   Lockman, Z ^a  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^b SCHOOL OF PHYSICS   (Malaysia)

Author keywords

A1. Interfaces; A1. X ray diffraction; B1. Cerium oxide; B1. Gallium nitride; B1. Silicon carbide; B3. Metal oxide semiconductor

Indexed keywords

A1. INTERFACES; A1. X-RAY DIFFRACTION; B1. CERIUM OXIDE; B1. GALLIUM NITRIDE; B1. SILICON CARBIDE; METAL OXIDE SEMICONDUCTOR;

CERIUM; CERIUM COMPOUNDS; DIELECTRIC DEVICES; DIFFRACTION; GALLIUM NITRIDE; METALS; MOS DEVICES; OXIDES; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79960179257     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.01.040     Document Type: Conference Paper

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