Effects of postdeposition annealing in argon ambient on metallorganic decomposed CeO2 gate spin coated on silicon

Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

  Quah, H J ^a   Cheong, K Y ^a   Hassan, Z ^b   Lockman, Z ^a   Jasni, F A ^a   Lim, W F ^a  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

^b SCHOOL OF PHYSICS   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ACETYLACETONATES; ANNEALING TEMPERATURES; ARGON AMBIENT; ARGON GAS; CAPACITANCE VOLTAGE MEASUREMENTS; CERIUM OXIDES; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; EFFECTIVE OXIDE CHARGE; INTERFACE TRAP DENSITY; METALLORGANIC DECOMPOSITION; NEGATIVE VOLTAGE; OXIDE CHARGE; POST DEPOSITION ANNEALING; ROOM TEMPERATURE; SI SUBSTRATES; SLOW COOLING; STARTING MATERIALS;

ANNEALING; ARGON; CERIUM; CERIUM COMPOUNDS; COOLING; METHANOL; ORGANOMETALLICS; OXYGEN; OXYGEN VACANCIES; SILICATES; SILICON; X RAY DIFFRACTION ANALYSIS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 72249116542     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3244214     Document Type: Article

References (51)

1. M. Filipescu, N. Scarisoreanu, D. G. Matei, G. Dinescu, A. Ferrari, M. Balucani, O. Toma, C. Ghica, L. C. Nistor, and M. Dinescu, Mater. Sci. Semicond. Process. 1369-8001, 7, 209 (2004). 10.1016/j.mssp.2004.09.122
2. W. K. Kim, S. W. Kang, and S. W. Rhee, J. Vac. Sci. Technol. A 0734-2101, 21, L16 (2003). 10.1116/1.1595107
3. J. H. Kim, V. A. Ignatova, and M. Weisheit, Microelectron. Eng. 0167-9317, 86, 357 (2009). 10.1016/j.mee.2008.11.012
4. R. M. Wallace and G. Wilk, MRS Bull., 27, 192 (2002).
5. J. Robertson, Eur. Phys. J.: Appl. Phys. 1286-0042, 28, 265 (2004). 10.1051/epjap:2004206 (Pubitemid 40002196)
6. E. P. Gusev, C. D'Emic, S. Zafar, and A. Kumar, Microelectron. Eng. 0167-9317, 72, 273 (2004). 10.1016/j.mee.2004.01.003
7. R. Mahapatra, A. K. Chakraborty, A. B. Horsfall, S. Chattopadhyay, N. G. Wright, and K. S. Coleman, J. Appl. Phys. 0021-8979, 102, 024105 (2007). 10.1063/1.2756521 (Pubitemid 47191989)
8. J. H. Yoo, S. W. Nam, S. K. Kang, Y. H. Jeong, D. H. Ko, J. H. Ku, and H. J. Lee, Microelectron. Eng. 0167-9317, 56, 187 (2001). 10.1016/S0167-9317(00) 00525-6 (Pubitemid 32335361)
9. A. Deshpande, R. Inman, G. Jursich, and C. G. Takoudis, J. Appl. Phys. 0021-8979, 99, 094102 (2006). 10.1063/1.2191434 (Pubitemid 43781958)
10. M. S. Rahman, E. K. Evangelou, A. Dimoulas, G. Mavrou, and S. Galata, J. Appl. Phys. 0021-8979, 103, 064514 (2008). 10.1063/1.2901214
11. J. Lappalainen, D. Kek, and H. L. Tuller, J. Eur. Ceram. Soc. 0955-2219, 24, 1459 (2004). 10.1016/S0955-2219(03)00578-8 (Pubitemid 38143745)
12. G. D. Wilk, R. M. Wallance, and J. M. Anthony, J. Appl. Phys. 0021-8979, 89, 5243 (2001). 10.1063/1.1361065
13. H. Fukuda, M. Miura, S. Sakuma, and S. Nomura, Jpn. J. Appl. Phys., Part 1 0021-4922, 37, 4158 (1998). 10.1143/JJAP.37.4158
14. J. Kang, X. Liu, G. Lian, Z. Zhang, G. Xiong, X. Guan, R. Han, and Y. Wang, Microelectron. Eng. 0167-9317, 56, 191 (2001). 10.1016/S0167-9317(00) 00526-8 (Pubitemid 32335362)
15. J. C. Wang, K. C. Chiang, T. F. Lei, and C. L. Lee, Electrochem. Solid-State Lett. 1099-0062, 7, E55 (2004). 10.1149/1.1819855 (Pubitemid 40015887)
16. T. Yamamoto, H. Momida, T. Hamada, T. Uda, and T. Ohno, Thin Solid Films 0040-6090, 486, 136 (2005). 10.1016/j.tsf.2004.11.240
17. K. J. Wang and K. Y. Cheong, Appl. Surf. Sci. 0169-4332, 254, 1981 (2008). 10.1016/j.apsusc.2007.08.012
18. H. Ahn, H. W. Chen, D. Landheer, X. Wu, L. J. Chou, and T. S. Chao, Thin Solid Films 0040-6090, 455, 318 (2004). 10.1016/j.tsf.2004.01.017
19. L. Kim, J. Kim, D. Jung, C. Y. Park, C. W. Yang, and Y. Roh, Thin Solid Films 0040-6090, 360, 154 (2000). 10.1016/S0040-6090(99)01087-1 (Pubitemid 30564550)
20. M. Wei and K. L. Choy, J. Cryst. Growth 0022-0248, 284, 464 (2005). 10.1016/j.jcrysgro.2005.07.034 (Pubitemid 41406315)
21. M. T. Ta, D. Briand, Y. Guhel, J. Bernard, J. C. Pesant, and B. Boudart, Thin Solid Films 0040-6090, 517, 450 (2008). 10.1016/j.tsf.2008.08.059
22. R. Wang, S. Pan, Y. Zhou, G. Zhou, N. Liu, K. Xie, and H. Lu, J. Cryst. Growth 0022-0248, 200, 505 (1999). 10.1016/S0022-0248(99)00058-5
23. N. Savvides, A. Thorley, S. Gnanarajan, and A. Katsaros, Thin Solid Films 0040-6090, 388, 177 (2001). 10.1016/S0040-6090(01)00839-2 (Pubitemid 32335226)
24. S. Deshpande, S. Patil, S. V. Kuchibhatla, and S. Seal, Appl. Phys. Lett. 0003-6951, 87, 133113 (2005). 10.1063/1.2061873
25. J. Kurian and M. Naito, Physica C 0921-4534, 402, 31 (2004). 10.1016/j.physc.2003.08.007
26. J. Zarraga-Colina, R. M. Nix, and H. Weiss, Surf. Sci. 0039-6028, 563, L251 (2004). 10.1016/j.susc.2004.06.156
27. B. E. Park, I. Sakai, E. Tokumitsu, and H. Ishiwara, Appl. Surf. Sci. 0169-4332, 117/118, 423 (1997). 10.1016/S0169-4332(97)80118-3
28. B. Hirschauer, G. Chiaia, M. Gothelid, and U. O. Karlsson, Thin Solid Films 0040-6090, 348, 3 (1999). 10.1016/S0040-6090(98)01759-3
29. R. Barnes, D. Starodub, T. Gustafsson, and E. Garfunkel, J. Appl. Phys. 0021-8979, 100, 044103 (2006). 10.1063/1.2234820 (Pubitemid 44327299)
30. S. Morlens, L. Ortega, B. Rousseau, S. Phok, J. L. Deschanvre, P. Chaudouet, and P. Odier, Mater. Sci. Eng., B 0921-5107, 104, 185 (2003). 10.1016/S0921-5107(03)00194-6
31. M. S. Bhuiyan, M. Paranthaman, and K. Salama, Semicond. Sci. Technol. 0268-1242, 19, R1 (2006).
32. T. Ami and M. Suzuki, Mater. Sci. Eng., B 0921-5107, 54, 84 (1998). 10.1016/S0921-5107(98)00133-0
33. S. Kanakaraju, S. Mohan, and A. K. Sood, Thin Solid Films 0040-6090, 305, 191 (1997). 10.1016/S0040-6090(97)00081-3
34. W. S. Woon, S. D. Hutagalung, and K. Y. Cheong, Thin Solid Films 0040-6090, 517, 2808 (2009). 10.1016/j.tsf.2008.10.137
35. Y. Zhou and J. A. Switzer, J. Alloys Compd. 0925-8388, 237, 1 (1996). 10.1016/0925-8388(95)02048-9
36. V. Senthilkumar, S. Venkatachalam, C. Viswanathan, S. Gopal, Sa. K. Narayandass, D. Mangalaraj, K. C. Wilson, and K. P. Vijayakumar, Cryst. Res. Technol. 0232-1300, 40, 573 (2005). 10.1002/crat.200410385 (Pubitemid 41366223)
37. I. Petrov, P. B. Barna, L. Hultman, and J. E. Greene, J. Vac. Sci. Technol. A 0734-2101, 21, S117 (2003). 10.1116/1.1601610
38. N. Izu, W. Shin, I. Matsubara, and N. Murayama, Sens. Actuators B 0925-4005, 94, 222 (2003). 10.1016/S0925-4005(03)00330-7
39. S. Wang, W. Wang, Q. Liu, M. Zhang, and Y. Qian, Solid State Ionics 0167-2738, 133, 211 (2000). 10.1016/S0167-2738(00)00762-1 (Pubitemid 30930991)
40. L. Triguero, S. Carolis, M. Baudin, M. Wojcik, K. Hermansson, M. A. Nygren, and L. G. M. Pettersson, Faraday Discuss. 0301-7249, 114, 351 (1999). 10.1039/a904987h
41. C. Y. Liu, B. Y. Chen, and T. Y. Tseng, J. Appl. Phys. 0021-8979, 95, 5602 (2004). 10.1063/1.1704850
42. T. M. Wang and J. G. Hwu, J. Appl. Phys. 0021-8979, 97, 044504 (2005). 10.1063/1.1850199 (Pubitemid 40238320)
43. D. K. Schroder, Semiconductor Material and Device Characterization, p. 337, John Wiley & Sons, New York (1998).
44. M. Toledano-Luque, E. S. Andres, J. Olea, A. D. Prado, I. Martil, W. Bohne, J. Rohrich, and E. Strub, Mater. Sci. Semicond. Process. 1369-8001, 9, 1020 (2006). 10.1016/j.mssp.2006.10.018
45. S. Lombardo, J. H. Stathis, B. P. Linder, K. L. Pey, F. Palumbo, and C. H. Tung, J. Appl. Phys. 0021-8979, 98, 121301 (2005). 10.1063/1.2147714 (Pubitemid 43032083)
46. J. M. LeBeau, J. S. Jur, D. J. Lichtenwalner, H. S. Craft, J. P. Maria, A. I. Kingon, D. O. Klenov, J. Cagnon, and S. Stemmer, Appl. Phys. Lett. 0003-6951, 92, 112912 (2008). 10.1063/1.2901036
47. M. Houssa, A. Stesmans, and M. M. Heyns, Semicond. Sci. Technol. 0268-1242, 16, 427 (2001). 10.1088/0268-1242/16/6/302 (Pubitemid 32585086)
48. M. Lemberger, A. Paskaleva, S. Zurcher, A. J. Bauer, L. Frey, and H. Ryssel, Microelectron. Eng. 0167-9317, 72, 315 (2004). 10.1016/j.mee.2004.01.010
49. H. Wong, B. Sen, V. Filip, and M. C. Poon, Thin Solid Films 0040-6090, 504, 192 (2006). 10.1016/j.tsf.2005.09.123
50. C. Jeon, S. Kong, and J. Kim, J. Korean Phys. Soc. 0374-4884, 42, 267 (2003).
51. K. Y. Cheong, J. H. Moon, H. J. Kim, W. Bahng, and N. Y. Kim, J. Appl. Phys. 0021-8979, 103, 084113 (2008). 10.1063/1.2908870 (Pubitemid 351623617)