Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O

IEEE Electron Device Letters

Volumn 17, Issue 7, 1996, Pages 355-357

  Sun, S C ^a,b   Chen, T F ^b  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DECOMPOSITION; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; NITROGEN OXIDES; PRESSURE EFFECTS; RELIABILITY; TANTALUM COMPOUNDS;

DRY DIOXIDE ANNEALING; LEAKAGE CURRENT REDUCTION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NITROGEN OXIDE DECOMPOSITION; SINGLE STEP ANNEALING TECHNIQUE; TANTALUM OXIDES; TIME DEPENDENT DIELECTRIC BREAKDOWN RELIABILITY;

DIELECTRIC FILMS;

EID: 0030182463     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.506365     Document Type: Article

References (18)

1. M. Koyanagi, H. Sunami, N. Hashimoto, and M. Ashikawa, "Novel high density, stacked capacitor MOS RAM," IEDM Tech. Dig., p. 348, 1978.
2. H. Sunami, T. Kure, N. Hashimoto, K. Itoh, T. Toysbe, and S. Asai, "A corrugated capacitor cell (CCC)," IEEE Trans. Electron Devices, vol. 31, p 746, 1984
3. 5 films grown by chemical vapor deposition," IEDM Tech. Dig., p. 680, 1986.
4. 5/W capacitor technology for 1Gbit DRAM," IEDM Tech. Dig., p. 49, 1993.
5. 5 films for storage dielectriscs of 64-Mb DRAM'S," IEEE Trans. Electron Devices, vol. 38, p. 455, 1991.
6. S. Tanimoto, M. Matsui, K. Kamisako, K. Kuroiwa, and Y. Tarui, "Investigation on leakage current reduction of photo-CVD tantalum oxide films accomplished by active oxygen annealing," J. Electrochem. Soc., vol. 139, p. 320, 1992.
7. 5 films by LPCVD for ULSI application," J. Electrochem. Soc., vol. 137, pp. 1297, 1990.
8. 4 dielectric films on poly-crystalline Si for DRAM's," IEEE Trans. Electron Dcvices, vol. 36, p. 328, 1989.
9. W. R. Hitchens, W. C. Krusell, and D. M. Dobkin, "Tantalum oxide thin films for dielectric applications by low-pressure chemical vapor deposition," J. Electrochem. Soc., vol. 140, p. 2615, 1993.
10. 5 plasma CVD technology for DRAM stacked capacitors," IEDM Tech. Dig., p. 43, 1989.
11. 5 capacitor process technology for 256Mbit DRAM's," IEDM Tech. Dig., p. 827, 1991.
12. 5 films on rugged polysilicon," IEEE Electron Device Lett., vol. 14, p. 216, 1993.
13. 2O annealin," IEDM Tech. Dig., p. 333, 1994.
14. 2O): the role of nitric oxide (NO)," in VLSI Tech. Symp., 1993, p. 51.
15. H. Kimura, J. Mizuki, S. Kamiyama, and H. Suzuki, "Extended x-ray absorption fine structure analysis of the difference in local structure of tantalum oxide capacitor films produced by various annealing metods," Appl. Phys. Lett., vol. 66, p. 2209, 1995.
16. Y. Okada, P. J. Tobin, K. G. Reid, R. J. Hedge, B. Maiti, and S. A. Ajuria, "Gate oxynitride in nitric oxide (NO)," Tech. Dig., Symp. VLSI Tech., p. 105, 1994.
17. 2 gate dielectrics," IEDM Tech. Dig., p. 329, 1994.
18. 5 films in nitric oxide ambient," in Extended Abstr. Electrochem. Soc. Fall Meeting. 1995, p. 870.