Interfacial reactions in the thin film Y2O3 on chemically oxidized Si(100) substrate systems

Thin Solid Films

Volumn 353, Issue 1, 1999, Pages 8-11

  Kang, Sung Kwan ^a   Ko, Dae Hong ^a   Kim, Eun Ha ^a   Ho Cho, Man ^a   Whang, C N ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FILM GROWTH; MIM DEVICES; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; YTTRIUM COMPOUNDS;

INTERFACIAL REACTIONS; METAL; YTTRIUM SILICATE LAYER;

INTERFACES (MATERIALS);

EID: 0033310960     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00418-6     Document Type: Article

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