SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 158, Issue 4, 2011, Pages

Effects of N2O postdeposition annealing on metal-organic decomposed CeO2 gate oxide spin-coated on GaN substrate

(4) Quah, H J a Cheong, K Y a Hassan, Z b Lockman, Z a

a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING (Malaysia)

b SCHOOL OF PHYSICS (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; CURRENT TRANSPORT MECHANISM; DARK-FIELD; EFFECTIVE OXIDE CHARGE; ENERGY DISPERSIVE X-RAY; GAN SUBSTRATE; GATE OXIDE; INTERFACE-TRAP DENSITY; INTERFACIAL LAYER; METAL OXIDE SEMICONDUCTOR; METAL-ORGANIC; N-COMPOUNDS; OXIDE BREAKDOWN; PHASE TRANSFORMATION; POST DEPOSITION ANNEALING; SCANNING TRANSMISSION ELECTRON MICROSCOPES; XRD;

ANNEALING; GALLIUM NITRIDE; MOS DEVICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CERIUM;

EID: 79955140391 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3548542 Document Type: Article

Times cited : (23)

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- E. Atanassova, A. Paskaleva, N. Novkovski, and M. Georgieva, J. Appl. Phys., 97, 094104 (2005). 10.1063/1.1884758 (Pubitemid 40682720)
- (2005) Journal of Applied Physics , vol.97 , Issue.9 , pp. 1-11
- Atanassova, E.¹ Paskaleva, A.² Novkovski, N.³ Georgieva, M.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.