Plasma cryogenic etching of silicon: From the early days to today's advanced technologies

Journal of Physics D: Applied Physics

Volumn 47, Issue 12, 2014, Pages

  Dussart, R ^a   Tillocher, T ^a   Lefaucheux, P ^a   Boufnichel, M ^b  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

black silicon; cryoetching; cryogenic etching; low k; silicon deep etching

Indexed keywords

BLACK SILICON; CRYOETCHING; CRYOGENIC ETCHING; DEEP ETCHING; LOW-K;

ASPECT RATIO; CRYOGENICS; ETCHING; PASSIVATION; SILICON;

SILICON OXIDES;

EID: 84896741578     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/12/123001     Document Type: Review

References (110)

1. Ramm P, Klumpp A, Weber J and Taklo M M V 2010 3D system-on-chip technologies for More than Moore systems Microsyst. Technol. 16 1051
2. Tachi S, Tsujimoto K and Okudaira S 1988 Low-temperature reactive ion etching and microwave plasma etching of silicon Appl. Phys. Lett. 52 616
3. Laermer F and Schilp A 1996 Method for anisotropic plasma etching of substrates US Patent 5498312
4. Poulsen R G 1977 Plasma etching in integrated circuit manufacture - a review J. Vac. Sci. Technol. 14 266
5. Jansen H V, Gardeniers H, de Boer M, Elwenspoek M and Fluitman J 1996 A survey on the reactive ion etching of silicon in microtechnology J. Micromech. Microeng. 6 14
6. Matsuo S 1980 Selective etching of Si relative to SiO2 without undercutting by CBrF3 plasma Appl. Phys. Lett. 36 768
7. Tachi S, Tsujimoto K, Arai S and Kure T 1991 Low-temperature dry etching J. Vac. Sci. Technol. A 9 796
8. Bestwick T D, Oehrlein G S and Angell D 1990 Cryogenic reactive ion etching of silicon in SF6 Appl. Phys. Lett. 57 431
9. Tsujimoto K, Okudaira S and Tachi S 1991 Low-temperature microwave plasma etching of crystalline silicon Japan. J. Appl. Phys. 30 3319
10. Aydil E S, Gregus J A and Gottscho R A 1993 Electron cyclotron resonance plasma reactor for cryogenic etching Rev. Sci. Instrum. 64 3572
11. Bartha J W, Greschner J, Puech M and Maquin P 1995 Low temperature etching of Si in high-density plasma using SF6/O2 Microelectron. Eng. 27 453
12. Puech M and Maquin Ph 1996 Low temperature etching of Si and PR in high-density plasmas Appl. Surf. Sci. 100-101 579
13. Boswell R W and Porteous R K 1987 Large volume, high density rf inductively coupled plasma Appl. Phys. Lett. 50 1130
14. Perry A J and Boswell R W 1989 Fast anisotropic etching of silicon in an inductively coupled plasma reactor Appl. Phys. Lett. 55 148
15. d'Agostino R and Flamm D L 1981 Plasma etching of Si and SiO2 in SF6-O2 mixtures J. Appl. Phys. 52 162
16. Oehrlein G S, Chan K K, Jaso M A and Rubloff G W 1989 Surface analysis of realistic semiconductor microstructures J. Vac. Sci. Technol. A 7 1030
17. Jansen H V, de Boer M J, Legtenberg R and Elwenspoek M C 1995 Black silicon method: I. A universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control J. Micromech. Microeng. 5 115
18. Jansen H V, de Boer M J, Burger J, Legtenberg R and Elwenspoek M C 1995 Black silicon method: II. The effect of mask material and loading on the reactive ion etching of deep silicon trenches Microelectron. Eng. 27 475
19. Jansen H V, de Boer M J, Otter B and Elwenspoek M C 1995 The black silicon method: IV. The fabrication of three-dimensional structures in silicon with high aspect ratios for scanning probe microscopy and other applications MEMS '95: Proc. IEEE Micro Electro Mechanical Systems (Amsterdam, Jan.-Feb. 1995) p 88
20. Esashi M, Takinami M, Wakabayashi Y and Minami K 1995 High-rate directional deep dry etching for bulk silicon micromachining J. Micromech. Microeng. 5 5
21. Wells T, El-Gomati M M and Wood J 1997 Low temperature reactive ion etching of silicon with SF6/O2 plasmas J. Vac. Sci. Technol. B 15 434
22. Chevolleau T, Tessier P Y, Cardinaud C and Turban G 1997 Etching of Si at low temperatures using a SF6 reactive ion beam: effect of the ion energy and current density J. Vac. Sci. Technol. A 15 2661
23. Tessier P Y, Chevolleau T, Cardinaud C and Grolleau B 1999 An XPS study of the SF6 reactive ion beam etching of silicon at low temperatures Nucl. Instrum. Methods Phys. Res. B 155 280
24. Oehrlein G S and Kurogi Y 1998 Sidewall surface chemistry in directional etching processes Mater. Sci. Eng. 24 153
25. Aachboun S and Ranson P 1999 Deep anisotropic etching of silicon J. Vac. Sci. Technol. A 17 2270
26. Aachboun S, Ranson P, Hilbert C and Boufnichel M 2000 Cryogenic etching of deep narrow trenches in silicon J. Vac. Sci. Technol. A 18 1848
27. Zijlstra T and van der Drift E 1999 Fabrication of two-dimensional photonic crystal wave guides for 1.5 um in silicon by deep anisotropic dry etching J. Vac. Sci. Technol. B 17 2734
28. Blauw M A, Zijlstra T, Bakker R A and van der Drift E 2000 Kinetics and crystal orientation dependence in high aspect ratio silicon dry etching J. Vac. Sci. Technol. B 18 3453
29. Jansen H V, de Boer M J, Wensink H, Kloeck B and Elwenspoek M C 2001 Black silicon method: VIII. A study of the performance of etching silicon using SF6/O2-based chemistry with cryogenical wafer cooling and a high-density ICP source Microelectron. J. 32 769
30. de Boer M J, Gardeniers J G E, Jansen H V, Smulders E, Gilde M-J, Roelofs G, Sasserath J N and Elwenspoek M C 2002 Black silicon method: IX. Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures J. Microelectromech. Syst. 11 385
31. Boufnichel M, Aachboun S, Grangeon F, Lefaucheux P and Ranson P 2002 Profile control of high aspect ratio trenches of silicon: I. Effect of process parameters on local bowing J. Vac. Sci. Technol. B 20 1508
32. Boufnichel M, Aachboun S, Lefaucheux P and Ranson P 2003 Profile control of high aspect ratio trenches of silicon: II. Study of the mechanisms responsible for local bowing formation and elimination of this effect J. Vac. Sci. Technol. B 21 267
33. Boufnichel M, Lefaucheux P, Aachboun S, Dussart R and Ranson P 2005 Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process Microelectron. Eng. 77 327
34. Marcos G, Rhallabi A and Ranson P 2003 Monte Carlo simulation method for etching of deep trenches in Si by a SF6/O2 plasma mixture J. Vac. Sci. Technol. B 21 87
35. Blauw M A, van der Drift E, Marcos G and Rhallabi A 2003 Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation J. Appl. Phys. 94 6311
36. Marcos G, Rhallabi A and Ranson P 2004 Topographic and kinetic effects of the SF6/O2 rate during a cryogenic etching process of silicon J. Vac. Sci. Technol. B 22 1912
37. Kokkoris G, Gogolides E and Boudouvis A G 2002 Etching of SiO2 features in fluorocarbon plasmas: explanation and prediction of gas-phase-composition effects on aspect ratio dependent phenomena in trenches J. Appl. Phys. 91 2697
38. Knizikevicius R 2002 Evaluation of desorption activation energy of SiF4 molecules Vacuum 68 29
39. Knizikevicius R and Kopustinskas V 2004 Anisotropic etching of silicon in SF6 plasma Vacuum 77 1
40. Knizikevicius R 2006 Simulation of anisotropic etching of silicon in SF6+O2 plasma Sensors Actuators A 132 726
41. Maruyama T, Narukage T, Onuki R and Fujiwara N 2010 High-aspect-ratio deep Si etching in SF6/O2 plasma: I. Characteristics of radical reactions with high-aspect-ratio patterns J. Vac. Sci. Technol. B 28 854
42. Rangelow I W 2003 Critical tasks in high aspect ratio silicon dry etching for MEMS J. Vac. Sci. Technol. A 21 1550
43. Dussart R, Boufnichel M, Marcos G, Lefaucheux P, Basillais A, Benoit R, Tillocher T, Mellhaoui X, Estrade-Szwarckopf H and Ranson P 2004 Passivation mechanisms in cryogenic SF6/O2 etching process J. Micromech. Microeng. 14 190
44. Mellhaoui X, Dussart R, Tillocher T, Lefaucheux P, Ranson P, Boufnichel M and Overzet L J 2005 SiOxFy passivation layer in silicon cryoetching J. Appl. Phys. 98 104901
45. Tillocher T, Dussart R, Mellhaoui X, Lefaucheux P, Mekkakia Maaza N, Ranson P, Boufnichel M and Overzet L J 2006 Oxidation threshold in silicon etching at cryogenic temperatures J. Vac. Sci. Technol. A 24 1073
46. Dussart R, Mellhaoui X, Tillocher T, Lefaucheux P, Boufnichel M and Ranson P 2007 The passivation layer formation in the cryo-etching plasma process Microelectron. Eng. 84 1128
47. Duluard C Y, Dussart R, Tillocher T, Pichon L E, Lefaucheux P, Puech M and Ranson P 2008 SO2 passivating chemistry for silicon cryogenic deep etching Plasma Sources Sci. Technol. 17 045008
48. Pereira J, Pichon L E, Dussart R, Cardinaud C, Duluard C Y, Oubensaid E H, Lefaucheux P, Boufnichel M and Ranson P 2009 In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process Appl. Phys. Lett. 94 071501
49. Sainiemi L and Franssila S 2007 Mask material effects in cryogenic deep reactive ion etching J. Vac. Sci. Technol. B 25 801
50. Pruessner M W, Rabinovich W S, Stievater T H, Park D and Baldwin J W 2007 Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches J. Vac. Sci. Technol. B 25 21
51. Tillocher T, Dussart R, Overzet L J, Mellhaoui X, Lefaucheux P, Boufnichel M and Ranson P 2008 Two cryogenic processes involving SF6, O2, and SiF4 for deep etching J. Electrochem. Soc. 155 D187
52. Dussart R, Tillocher T, Lefaucheux P, Ranson P, Mellhaoui X, Boufnichel M and Overzet L J 2008 Deep anisotropic silicon etch method France Patent 2914782-A1
53. Isakovic A F, Evans-Lutterodt K, Elliott D, Stein A and Warren J B 2008 Cyclic, cryogenic, highly anisotropic plasma etching of silicon using SF6/O2 J. Vac. Sci. Technol. A 26 1182
54. Jansen H V, de Boer M J, Unnikrishnan S, Louwerse M C and Elwenspoek M C 2009 Black silicon method X : a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment J. Micromech. Microeng. 19 033001
55. Henry M D, Welch C and Scherer A 2009 Techniques of cryogenic reactive ion etching in silicon for fabrication of sensors J. Vac. Sci. Technol. A 27 1211
56. Sökmen Ü, Stranz A, Fünding S, Merzsch S, Neumann R, Wehmann H H, Peiner E and Waag A 2010 Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process Microsyst. Technol. 16 863
57. Kamto A, Divan R, Sumant A V and Burkett S L 2010 Cryogenic inductively coupled plasma etching for fabrication of tapered through-silicon vias J. Vac. Sci. Technol. A 28 719
58. Wu Y, Olynick D L, Goodyear A, Peroz C, Dhuey S, Liang X and Cabrini S 2011 Cryogenic etching of nano-scale silicon trenches with resist masks Microelectron. Eng. 88 2785
59. Liu Z, Wu Y, Harteneck B and Olynick D 2013 Super-selective cryogenic etching for sub-10 nm features Nanotechnology 24 015305
60. Zhang L, Ljazouli R, Lefaucheux P, Tillocher T, Dussart R, Mankelevich Y A, de Marneffe J F, de Gendt S and Baklanov M R 2013 Damage free cryogenic etching of a porous organosilica ultralow-k film ECS Solid State Lett. 2 N5
61. Zhang L, Ljazouli R, Lefaucheux P, Tillocher T, Dussart R, Mankelevich Y A, de Marneffe J F, de Gendt S and Baklanov M R 2013 Low damage cryogenic etching of porous organosilicate low-k materials using SF6/O2/SiF4 ECS J. Solid State Sci. Technol. 2 131
62. Hibert C, Aachboun S, Boufnichel M and Ranson P 2001 Study of a mechanically clamped cryo-chuck device in a high-density plasma for deep anisotropic etching of silicon J. Vac. Sci. Technol. A 19 646
63. Lieberman M A and Lichtenberg A J 1994 Principles of Plasma Discharges and Processing (New York: Wiley)
64. Gomez S, Belen R J, Kiehlbauch M and Aydil E S 2004 Etching of high aspect ratio structures in Si using SF6/O2 plasma J. Vac. Sci. Technol. A 22 606
65. Gomez S, Belen R J, Kiehlbauch M and Aydil E S 2005 Etching of high aspect ratio features in Si using SF6/O2/HBr and SF6/O2/Cl2 plasma J. Vac. Sci. Technol. A 23 1592
66. Walker M J 2001 Comparison of Bosch and cryogenic processes for patterning high aspect ratio features in silicon Proc. SPIE 4407 89
67. Dussart R, Thomann A L, Pichon L E, Bedra L, Semmar N, Lefaucheux P, Mathias J and Tessier Y 2008 Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma Appl. Phys. Lett. 93 131502
68. Oubensaid E H, Duluard C Y, Pichon L E, Morillon B, Boufnichel M, Lefaucheux P, Dussart R and Ranson P 2009 Cryogenic etching of n-type silicon with p+ doped walls with the TGZM process through the Al/Si eutectic alloy Microelectron. Eng. 86 2262
69. Tillocher T, Dussart R, Mellhaoui X, Lefaucheux P, Boufnichel M and Ranson P 2007 Silicon cryo-etching of deep holes Microelectron. Eng. 84 1120
70. Maruyama T, Narukage T, Onuki R and Fujiwara N 2010 High-aspect-ratio deep Si etching in SF6/O2 plasma: II. Mechanism of lateral etching in high-aspect-ratio features J. Vac. Sci. Technol. B 28 862
71. Craciun G, Blauw M A, van der Drift E, Sarro P M and French P J 2002 Temperature influence on etching deep holes with SF6/O2 cryogenic plasma J. Micromech. Microeng. 12 390
72. Ligenza J R 1961 Effect of crystal orientation on oxidation rates of silicon in high pressure steam J. Phys. Chem. 65 2011
73. Mekkakia-Maaza N, Dussart R, Tillocher T, Lefaucheux P and Ranson P 2013 A novel amorphization-etch alternating process for Si(1 0 0) J. Micromech. Microeng. 23 045023
74. Zhang J and Fisher E R 2004 Creation of SiOF films with SiF4/O2 plasmas: from gas-surface interactions to film formation J. Appl. Phys. 96 1094
75. Kim J H, Seo S H, Yun S M, Changa H Y, Lee K M and Choi C K 1996 The deposition of SiOF film with low dielectric constant in a helicon plasma source Appl. Phys. Lett. 68 1507
76. Lee S and Park J W 1996 Effect of fluorine on dielectric properties of SiOF films J. Appl. Phys. 80 5260
77. Kim S P and Choi S K 2000 The origin of intrinsic stress and its relaxation for SiOF thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition Thin Solid Films 379 259
78. Jansen H V, de Boer M J, Ma K, Gironès M, Unnikrishnan S, Louwerse M C and Elwenspoek M C 2010 Black silicon method XI: oxygen pulses in SF6 plasma J. Micromech. Microeng. 20 075027
79. Tillocher T, Kafrouni W, Ladroue J, Lefaucheux P, Boufnichel M, Ranson P and Dussart R 2011 Optimization of submicron deep trench profiles with the STiGer cryoetching process: reduction of defects J. Micromech. Microeng. 21 085005
80. Defforge T, Songa X, Gautier G, Tillocher T, Dussart R, Kouassi S and Tran-Van F 2011 Scalloping removal on DRIE via using low concentrated alkaline solutions at low temperature Sensors Actuators A 170 114
81. Duluard C Y, Ranson P, Pichon L E, Oubensaid E H, Pereira J, Lefaucheux P, Puech M and Dussart R 2009 Neutral species in inductively coupled SF6/SiCl4 plasmas J. Phys. D: Appl. Phys. 42 115206
82. Duluard C Y, Ranson P, Pichon L E, Pereira J, Oubensaid E H, Lefaucheux P, Puech M and Dussart R 2011 Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching J. Micromech. Microeng. 21 065015
83. Bruneau G 2002 SIMEG Software, ESPEO-Polytech (Orléans: Université d'Orléans)
84. Yoo J S, Parm I O, Gangopadhyay U, Kim K, Dhungel S K, Mangalaraj D and Yi J 2006 Black silicon layer formation for application in solar cells Sol. Energy Mater. Sol. Cells 90 3085
85. Yoo J, Kim K, Thamilselvan M, Lakshminarayn N, Kim Y K, Lee J, Yoo K J and Yi J 2008 RIE texturing optimization for thin c-Si solar cells in SF6/O2 plasma J. Phys. D: Appl. Phys. 41 125205
86. Yoo J, Yua G and Yi J 2009 Black surface structures for crystalline silicon solar cells Mater. Sci. Eng. B 159 333
87. Branz H M, Yost V E, Ward S, Jones K M, To B and Stradins P 2009 Nanostructured black silicon and the optical reflectance of graded-density surfaces Appl. Phys. Lett. 94 231121
88. Iyengar V V, Nayak B K and Gupta M C 2010 Optical properties of silicon light trapping structures for photovoltaics Sol. Energy Mater. Sol. Cells 94 2251
89. Xia Y, Liu B, Liu J, Shen Z and Li C 2011 A novel method to produce black silicon for solar cells Sol. Energy 85 1574
90. Stubenrauch M, Fischer M, Kremin C, Stoebenau S, Albrecht A and Nagel O 2006 Black silicon - new functionalities in microsystems J. Micromech. Microeng. 16 S82
91. Turner S, Kam L, Isaacson M, Craighead H G, Shain W and Turner J J 1997 Cell attachment on silicon nanostructures Vac. Sci. Technol. B 15 2848
92. Nguyen K N, Abi-Saab D, Basset P, Richalot E, Malak M, Pavy N, Flourens F, Marty F, Angelescu D, Leprince-Wang Y and Bourouina T 2012 Study of black silicon obtained by cryogenic plasma etching: approach to achieve the hot spot of a thermoelectric energy harvester Microsyst. Technol. 18 1807
93. Yang C, Ryu S-H, LIM Y-D and Yoo W J 2008 Self-assembly of Si nanostructures in SF6/O2 plasma Nano 3 169
94. Leopold S, Kremin C, Ulbrich A, Krischok S and Hoffmann M 2011 Formation of silicon grass: nanomasking by carbon clusters in cyclic deep reactive ion etching J. Vac. Sci. Technol. B 29 011002
95. Vourdas N, Kontziampasis D, Kokkoris G, Constantoudis V, Goodyear A, Tserepi A, Cooke M and Gogolides E 2010 Plasma directed assembly and organization: bottom-up nanopatterning using top-down technology Nanotechnology 21 085302
96. Dussart R, Mellhaoui X, Tillocher T, Lefaucheux P, Volatier M, Socquet-Clerc C, Brault P and Ranson P 2005 Silicon columnar microstructures induced by an SF6/O2 plasma J. Phys. D: Appl. Phys. 38 3395
97. Nguyen K N, Basset P, Marty F, Leprince-Wang Y and Bourouina T 2013 On the optical and morphological properties of microstructured black silicon obtained by cryogenic-enhanced plasma reactive ion etching J. Appl. Phys. 113 194903
98. Zhao Y P, Drotar J T, Wang G C and Lu T M 1999 Roughening in plasma etch fronts of Si(1 0 0) Phys. Rev. Lett. 82 4882
99. Couëdel L, Mikikian M, Boufendi L and Samarian A A 2006 Residual dust charges in discharge afterglow Phys. Rev. E 74 026403
100. Boufendi L, Jouanny M Ch, Kovacevic E, Berndt J and Mikikian M 2011 Dusty plasma for nanotechnology J. Phys. D: Appl. Phys. 44 174035
101. Sainiemi L, Keskinen H, Aromaa M, Luosujärvi L, Grigoras K, Kotiaho T, Mäkelä J M and Franssila S 2007 Rapid fabrication of high aspect ratio silicon nanopillars for chemical analysis Nanotechnology 18 505303
102. Gu X, Liu Z, Gunkel I, Chourou S T, Hong S W, Olynick D L and Russell T P 2012 High aspect ratio sub-15 nm silicon trenches from block copolymer templates Adv. Mater. 24 5688
103. Sinturel C, Vayer M, Morris M and Hillmyer M A 2013 Solvent vapor annealing of block polymer thin films Macromolecules 46 5399
104. Dubois G and Volksen W 2012 Low-k materials: recent advances Advanced Interconnects for ULSI Technology ed M R Baklanov et al (Chichester: Wiley)
105. Darnon M et al 2013 Impact of low-k structure and porosity on etch processes J. Vac. Sci. Technol. B 31 011207
106. Calvert J M and Gallagher M K 2003 A new approach to ultralow-k dielectrics Semicond. Int. 26 56
107. Jousseaume V, Favennec L, Zenasni A and Passemard G 2006 Plasma-enhanced chemical-vapor-deposited ultralow k for a postintegration porogen removal approach Appl. Phys. Lett. 88 182908
108. Fayolle M et al 2004 Cu/ULK integration using a post integration porogen removal approach Proc. IEEE Int. Interconnect Technology Conf. (Burlingame, CA, June 2004) p 208
109. Frot T, Volksen W, Purushothaman S, Bruce R and Dubois G 2011 Application of the protection/deprotection strategy to the science of porous materials Adv. Mater. 23 2828
110. Frot T, Volksen W, Purushothaman S, Bruce R L, Magbitang T, Miller D C, Deline V R and Dubois G 2012 Post porosity plasma protection: scaling of efficiency with porosity Adv. Funct. Mater. 22 3043