The black silicon method. VIII. A study of the performance of etching silicon using SF6/O2-based chemistry with cryogenical wafer cooling and a high density ICP source

Microelectronics Journal

Volumn 32, Issue 9, 2001, Pages 769-777

  Jansen, Henri ^a,b   De Boer, Meint ^a   Wensink, Henk ^a   Kloeck, Ben ^a   Elwenspoek, Miko ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b IMEC   (Belgium)

Author keywords

Anisotropic; Cryogenic; Crystal; Etch rate; High density; ICP; Plasma; Profile; Selectivity; Silicon

Indexed keywords

ANISOTROPY; COOLING; CRYOGENICS; ETCHING; INDUCTIVELY COUPLED PLASMA; PRESSURE EFFECTS;

BLACK SILICON METHOD;

SILICON WAFERS;

EID: 0035452472     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(01)00039-8     Document Type: Article

References (8)

1. The black silicon method: A universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control
2. RIE lag in high aspect ratio trench etching of silicon
3. Microwave plasma etching
4. Flow rate effects in plasma etching
5. The implication of flow-rate dependencies in plasma etching
6. Deep and fast plasma etching for silicon micromachining
7. Low temperature microwave plasma etching of crystalline silicon
8. Dry etching for MEMS