Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures

Journal of Microelectromechanical Systems

Volumn 11, Issue 4, 2002, Pages 385-401

  De Boer, Meint J ^b   Gardeniers, J G E ^c   Jansen, Henri V ^b   Smulders, Edwin ^b   Gilde, Melis Jan ^d   Roelofs, Gerard ^b   Sasserath, Jay N ^e   Elwenspoek, Miko ^a,b  

^a IEEE

^b UNIVERSITY OF TWENTE   (Netherlands)

^c Micronit Microfluidics   (Netherlands)

^d Alcatel Optronics Netherlands   (Netherlands)

^e Market Quest Consulting   (United States)

Author keywords

Cryogenic etching; Profile control; Reactive ion etching (RIE)

Indexed keywords

CRYOGENICS; CRYSTALLOGRAPHY; FLUORINE; KINETIC ENERGY; MICROSTRUCTURE; PASSIVATION; PLASMAS; POLYMERS; REACTIVE ION ETCHING; SILICON; SILICON WAFERS;

HIGH-DENSITY PLASMAS;

MICROELECTROMECHANICAL DEVICES;

EID: 0036684902     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2002.800928     Document Type: Article

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