Alternating SiCl4/O2 passivation steps with SF 6 etch steps for silicon deep etching

Journal of Micromechanics and Microengineering

Volumn 21, Issue 6, 2011, Pages

  Duluard, C Y ^a,b   Ranson, P ^a   Pichon, L E ^a   Pereira, J ^a   Oubensaid, E H ^a   Lefaucheux, P ^a   Puech, M ^b   Dussart, R ^a  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; DEEP ETCHING; ETCH RATES; ETCHED STRUCTURES; EX SITU ANALYSIS; GAS FLOWS; GAS-FLOW RATIO; INDUCTIVELY-COUPLED; PASSIVATION LAYER; PLASMA ETCH; PLASMA PASSIVATION; SIDEWALL PROTECTION; SILICON ETCHING; SUBSTRATE TEMPERATURE;

ETCHING; FLOW OF GASES; INDUCTIVELY COUPLED PLASMA; SULFUR HEXAFLUORIDE;

PASSIVATION;

EID: 79957958889     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/21/6/065015     Document Type: Article

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