High-aspect-ratio deep Si etching in SF6/O2 plasma. I. Characteristics of radical reactions with high-aspect-ratio patterns

Journal of Vacuum Science and Technology B

Volumn 28, Issue 4, 2010, Pages 854-861

  Maruyamaa, Takahiro ^a   Narukage, Takeshi ^b   Onuki, Ryota ^a   Fujiwara, Nobuo ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b Renesas Semiconductor Engineering Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMS; ETCHING; INTELLIGENT SYSTEMS; MONTE CARLO METHODS; PROBABILITY; REACTION KINETICS;

CONTINUOUS TYPES; ETCH RATES; HIGH ASPECT RATIO; HIGH ASPECT RATIO PATTERNS; ION ENERGIES; KNUDSEN; MONTE CARLO'S SIMULATION; PARAMETRIC STUDY; RADICAL REACTIONS; SUBSTRATES TEMPERATURE;

SULFUR HEXAFLUORIDE;

EID: 77957223732     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3466794     Document Type: Conference Paper

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