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Volumn 86, Issue 11, 2009, Pages 2262-2269

Cryogenic etching of n-type silicon with p+ doped walls with the TGZM process through the Al/Si eutectic alloy

Author keywords

Aluminium; Cryogenic; Etching; Plasma; Selectivity; Silicon; Thermomigration

Indexed keywords

ALUMINIUM; CRYOGENIC ETCHING; DEEP TRENCH; DOPED SILICON; EUTECTIC ALLOYS; HARD MASKS; N TYPE SILICON; SELECTIVITY; THERMOMIGRATION;

EID: 69549124016     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.04.002     Document Type: Article
Times cited : (6)

References (21)
  • 3
    • 69549134381 scopus 로고    scopus 로고
    • Ph.D. Thesis, Study of Aluminum Thermomigration in Silicon for the Industrial Realisation of Isolations Walls in Bidirectional Power Devices, INSA de Toulouse, July
    • B. Morillon, Ph.D. Thesis, Study of Aluminum Thermomigration in Silicon for the Industrial Realisation of Isolations Walls in Bidirectional Power Devices, INSA de Toulouse, July 2002.
    • (2002)
    • Morillon, B.1
  • 20
    • 69549127009 scopus 로고    scopus 로고
    • New deep plasma etching, patent application number 07/54270
    • New deep plasma etching, patent application number 07/54270.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.