Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process

Microelectronic Engineering

Volumn 77, Issue 3-4, 2005, Pages 327-336

  Boufnichel, M ^a,b   Lefaucheux, P ^a   Aachboun, S ^b   Dussart, R ^a   Ranson, P ^a  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Cryogenic; High aspect ratio trenches; SF6 O2; Silicon etching; Undercut

Indexed keywords

ASPECT RATIO; CAPACITORS; CRYOGENICS; MASKS; NANOTECHNOLOGY; PASSIVATION; SILICON; SUBSTRATES;

HIGH ASPECT RATIO TRENCHES; SF6/O2; SILICON ETCHING; UNDERCUTS;

PLASMA ETCHING;

EID: 15344339765     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.12.002     Document Type: Article

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