Black silicon method XI: Oxygen pulses in SF6 plasma

Journal of Micromechanics and Microengineering

Volumn 20, Issue 7, 2010, Pages

  Jansen, H V ^a   De Boer, M J ^a   Ma, K ^a   Girones M ^a   Unnikrishnan, S ^a   Louwerse, M C ^a   Elwenspoek, M C ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BLACK SILICON; BLACK SILICON METHODS; BOSCH PROCESS; CRYOGENIC TEMPERATURES; DEEP REACTIVE ION ETCHING; DUST PARTICLE; ENVIRONMENTAL RESTRICTION; HIGH ETCH RATE; HIGH-SPEED; HIGHER TEMPERATURES; LOW BIAS; LOW TEMPERATURES; MASK MATERIALS; NATIVE OXIDES; OXYGEN PLASMAS; OXYGEN PULSE; PARAMETER FLUCTUATIONS; PLASMA GLOW; PROFILE CONTROL; PULSED MODE; SIDEWALL PROTECTION; SILICA DUST; SILICON ETCHING;

CRYOGENICS; DUST; OXYGEN; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON WAFERS;

REACTIVE ION ETCHING;

EID: 77953898435     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/7/075027     Document Type: Article

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