Cryogenic inductively coupled plasma etching for fabrication of tapered through-silicon vias

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 4, 2010, Pages 719-725

  Kamto, A ^a   Divan, R ^b   Sumant, A V ^b   Burkett, S L ^a  

^a University of Alabama   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATION; CHAMBER PRESSURE; CHEMICAL VAPOR DEPOSITED; COMMON PROBLEMS; CONFORMAL COVERAGE; COPPER MIGRATION; CRYOGENIC TEMPERATURES; ELECTRONIC TECHNOLOGIES; ETCH PROCESS; ETCH RATES; GAS CHEMISTRY; GAS FLOWRATE; HETEROGENEOUS INTEGRATION; INTEGRATED CIRCUIT COMPONENTS; LOW-TEMPERATURE DEPOSITION; MASKING MATERIAL; MICRO ELECTRO MECHANICAL SYSTEM; REVERSE PULSE PLATING; SEED FILMS; SIDEWALL MORPHOLOGY; SILICON DIOXIDE; SUBSTRATE TEMPERATURE; THREE-DIMENSIONAL (3D); THROUGH SILICON VIAS;

COPPER; CRYOGENICS; ELECTROMAGNETIC INDUCTION; ELECTROPLATING; INDUCTIVELY COUPLED PLASMA; INTEGRATED CIRCUITS; MEMS; MICROELECTROMECHANICAL DEVICES; PLASMA ETCHING; PRESSURE EFFECTS; SILICA; SILICON WAFERS; THREE DIMENSIONAL;

GAS PERMEABLE MEMBRANES;

EID: 77954210416     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3281005     Document Type: Conference Paper

References (33)

1. I. U. Abhulimen, S. Polamreddy, S. Burkett, L. Cai, and L. Schaper, J. Vac. Sci. Technol. B JVTBD9 1071-1023 25, 1762 (2007). 10.1116/1.2787869 (Pubitemid 350255789)
2. I. U. Abhulimen, A. Kamto, Y. Liu, S. L. Burkett, and L. Schaper, J. Vac. Sci. Technol. B JVTBD9 1071-1023 26, 1834 (2008). 10.1116/1.2993174
3. S. Spiesshoefer, J. Vac. Sci. Technol. A JVTAD6 0734-2101 24, 1277 (2006). 10.1116/1.2206193 (Pubitemid 43959153)
4. A. Kamto, Y. Liu, L. Schaper, and S. L. Burkett, Thin Solid Films THSFAP 0040-6090 518, 1614 (2009). 10.1016/j.tsf.2009.07.151
5. F. Läermer and A. Schilp, German Patent No. DE-4241045C1 (May 26, 1994); U.S. Patent No. 5,501,893 (March 26, 1996).
6. S. A. McAuley, H. Ashraf, L. Atabo, A. Chambers, S. Hall, J. Hopkins, and G. Nicholls, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 34, 2769 (2001). 10.1088/0022-3727/34/18/309 (Pubitemid 32950880)
7. N. Ranganathan, D. Y. Lee, L. Ebin, N. Balasubramanian, K. Prasad, and K. L. Pey, J. Micromech. Microeng. JMMIEZ 0960-1317 18, 115028 (2008). 10.1088/0960-1317/18/11/115028
8. 3D Integration: Technology and Applications, edited by, P. Garrou, P. Ramm, and, C. Bower, (Wiley, New York, 2008), Vols. 1 and 2.
9. H. V. Jansen, M. J. de Boer, R. Legtenberg, and M. C. Elwenspoek, J. Micromech. Microeng. JMMIEZ 0960-1317 5, 115 (1995). 10.1088/0960-1317/5/2/015
10. S. Tachi, K. Tsujimoto, and S. Okudaira, Appl. Phys. Lett. APPLAB 0003-6951 52, 616 (1988). 10.1063/1.99382
11. J. W. Bartha, J. Greschner, M. Puech, and P. Maquin, Microelectron. Eng. MIENEF 0167-9317 27, 453 (1995). 10.1016/0167-9317(94)00144-J
12. M. Francou, J. S. Danel, and L. Peccoud, Sens. Actuators, A SAAPEB 0924-4247 46-47, 17 (1995).
13. M. J. de Boer, J. G. E. Gardeniers, H. V. Jansen, E. Smulders, M. J. Gilde, G. Roelofs, J. N. Sasserath, and M. Elwenspoek, J. Microelectromech. Syst. JMIYET 1057-7157 11, 385 (2002). 10.1109/JMEMS.2002.800928 (Pubitemid 34950046)
14. T. Zijlstra, E. Van der Drift, M. J. A. de Dood, E. Snoeks, and A. Polman, J. Vac. Sci. Technol. B JVTBD9 0734-211X 17, 2734 (1999). 10.1116/1.591054
15. M. J. M. Vugts, L. J. F. Hermans, and H. C. W. Beijerinck, J. Vac. Sci. Technol. A JVTAD6 0734-2101 14, 2820 (1996). 10.1116/1.580205 (Pubitemid 126129227)
16. S. Aachboun, P. Ranson, C. Hilbert, and M. Boufnichel, J. Vac. Sci. Technol. A JVTAD6 0734-2101 18, 1848 (2000). 10.1116/1.582434
17. G. Craciun, M. A. Blauw, E. Van der Drift, P. M. Sarro, and P. J. French, J. Micromech. Microeng. JMMIEZ 0960-1317 12, 390 (2002). 10.1088/0960-1317/12/ 4/307 (Pubitemid 34830212)
18. R. Dussart, J. Micromech. Microeng. JMMIEZ 0960-1317 14, 190 (2004). 10.1088/0960-1317/14/2/004
19. R. Li, Y. Lamy, W. F. A. Besling, F. Roozeboom, and P. M. Sarro, J. Micromech. Microeng. JMMIEZ 0960-1317 18, 125023 (2008). 10.1088/0960-1317/18/ 12/125023
20. S. Gomez, R. J. Belen, M. Kiehlbauch, and E. S. Aydil, J. Vac. Sci. Technol. A JVTAD6 0734-2101 22, 606 (2004). 10.1116/1.1710493
21. T. Tillocher, R. Dussard, X. Mellhaoui, P. Lefaucheux, M. Boufnichel, and P. Ranson, Microelectron. Eng. MIENEF 0167-9317 84, 1120 (2007). 10.1016/j.mee.2007.01.148 (Pubitemid 46678348)
22. M. W. Pruessner, W. S. Rabinovich, T. H. Stievater, D. Park, and J. W. Baldwin, J. Vac. Sci. Technol. B JVTBD9 1071-1023 25, 21 (2007). 10.1116/1.2402151 (Pubitemid 46511995)
23. M. Boufnichel, P. Lefaucheux, S. Aachboun, R. Dussard, and P. Ranson, Microelectron. Eng. MIENEF 0167-9317 77, 327 (2005). 10.1016/j.mee.2004.12.002 (Pubitemid 40391478)
24. L. Sainiemi and S. Franssila, J. Vac. Sci. Technol. B JVTBD9 1071-1023 25, 801 (2007). 10.1116/1.2734157 (Pubitemid 46872369)
25. P. Dixit and J. Miao, J. Electrochem. Soc. JESOAN 0013-4651 153, G771 (2006). 10.1149/1.2210567 (Pubitemid 43958783)
26. P. Wellner, O. Kraft, G. Dehm, J. Andersons, and E. Arzt, Acta Mater. ACMAFD 1359-6454 52, 2325 (2004). 10.1016/j.actamat.2004.01.023
27. W. Oh, T. J. Shin, M. Ree, M. Y. Jin, and K. Char, Macromol. Chem. Phys. MCHPES 1022-1352 203, 801 (2002). 10.1002/1521-3935(20020401)203:5/6<801:: AID-MACP801>3.0.CO;2-E
28. A. Campo, C. Cardinaud, and G. Turban, J. Vac. Sci. Technol. B JVTBD9 0734-211X 13, 235 (1995). 10.1116/1.588357
29. A. Campo, C. Cardinaud, and G. Turban, Plasma Sources Sci. Technol. PSTEEU 0963-0252 4, 398 (1995). 10.1088/0963-0252/4/3/009
30. G. S. Oehrlein, S. W. Robey, and J. L. Lindstrom, Appl. Phys. Lett. APPLAB 0003-6951 52, 1170 (1988). 10.1063/1.99195
31. K. Ninomiya, K. Susuki, S. Nishimatsu, and O. Okada, J. Appl. Phys. JAPIAU 0021-8979 62, 1459 (1987). 10.1063/1.339652
32. M. Puech and P. Maquin, Appl. Surf. Sci. ASUSEE 0169-4332 100-101, 579 (1996). 10.1016/0169-4332(96)00342-X (Pubitemid 126357864)
33. T. Rowbotham, J. Patel, T. Lam, S. Burkett, L. Cai, and L. Schaper, J. Vac. Sci. Technol. B JVTBD9 1071-1023 24, 2460 (2006). 10.1116/1.2221313 (Pubitemid 44496242)