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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 5, 2009, Pages 1211-1216

Techniques of cryogenic reactive ion etching in silicon for fabrication of sensors

(3) Henry, M David a Welch, Colin b Scherer, Axel a

a California Institute of Technology (United States)

b OXFORD INSTRUMENTS PLASMA TECHNOLOGY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; ELECTROMECHANICAL DEVICES; FABRICATION; INDUCTIVELY COUPLED PLASMA; MEMS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SILICON COMPOUNDS; SILICON OXIDES;

CRYOGENIC ETCHING; CRYOGENIC PROPERTIES; ETCHING METHOD; INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHER; MECHANICAL; OPTICAL-; PROPERTY; REACTIVE-ION ETCHING; SENSOR GEOMETRIES; SINGLE-STEP;

PHOTORESISTS;

EID: 70349092226 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3196790 Document Type: Article

Times cited : (37)

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