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Volumn 379, Issue 1-2, 2000, Pages 259-264

Origin of intrinsic stress and its relaxation for SiOF thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BOMBARDMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; STRESS RELAXATION; SUBSTRATES; THIN FILMS;

EID: 0034503675     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01399-7     Document Type: Article
Times cited : (15)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.