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Volumn 379, Issue 1-2, 2000, Pages 259-264
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Origin of intrinsic stress and its relaxation for SiOF thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPRESSIVE STRESS;
ELECTRON CYCLOTRON RESONANCE;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
ION BOMBARDMENT;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON COMPOUNDS;
STRESS RELAXATION;
SUBSTRATES;
THIN FILMS;
INTRINSIC STRESS;
LOW DIELECTRIC MATERIALS;
DIELECTRIC FILMS;
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EID: 0034503675
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(00)01399-7 Document Type: Article |
Times cited : (15)
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References (20)
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