XPS study of the SF6 reactive ion beam etching of silicon at low temperatures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 155, Issue 3, 1999, Pages 280-288

  Tessier, P Y ^a   Chevolleau, T ^a   Cardinaud, C ^a   Grolleau, B ^a  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHROMIUM; CURRENT DENSITY; ELECTRON ENERGY LEVELS; IRON; LOW TEMPERATURE OPERATIONS; PLASMA APPLICATIONS; REACTIVE ION ETCHING; SILICON; SULFUR COMPOUNDS; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMISORBED SULFUR; ION STIMULATED DESORPTION; MICROWAVE PLASMA; PHYSISORBED SPECIES; SULFUR FLUORIDE; X RAY PHOTOEMISSION SPECTROSCOPY;

ION BOMBARDMENT;

EID: 0033366502     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00451-6     Document Type: Article

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