Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1508-1513

  Boufnichel, M ^a,b   Aachboun, S ^b   Grangeon, F ^a   Lefaucheux, P ^a   Ranson, P ^a  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CARRIER CONCENTRATION; CHEMICAL REACTORS; ELECTRIC CONDUCTIVITY; FLOW OF FLUIDS; FLUORINE COMPOUNDS; INDUCTIVELY COUPLED PLASMA; OXYGEN; PLASMA ETCHING; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS;

BIAS VOLTAGE; BOWING EFFECT; CRYOGENIC ETCHING; GAS FLOW RATE; HIGH ASPECT RATIO TRENCHES; INDUCTIVELY COUPLED PLASMA REACTOR; PASSIVATION LAYER;

SILICON WAFERS;

EID: 0035982798     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1495505     Document Type: Conference Paper

References (16)