Two cryogenic processes involving S F6, O2, and Si F4 for silicon deep etching

Journal of the Electrochemical Society

Volumn 155, Issue 3, 2008, Pages

  Tillocher, T ^a   Dussart, R ^a   Overzet, L J ^b   Mellhaoui, X ^a   Lefaucheux, P ^a   Boufnichel, M ^c   Ranson, P ^a  

^a Cnrs/polytech'Orleans   (France)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; PLASMA ETCHING;

CRYOETCHING PROCESSES; REACTOR WALL CONTAMINATION;

SILICON;

EID: 38349128595     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2826280     Document Type: Article

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