RIE texturing optimization for thin c-Si solar cells in SF 6/O2 plasma

Journal of Physics D: Applied Physics

Volumn 41, Issue 12, 2008, Pages

  Yoo, J ^a   Kim, Kyunghae ^b   Thamilselvan, M ^b,d   Lakshminarayn, N ^b,e   Kim, Young Kuk ^b   Lee, Jaehyeong ^c   Yoo, Kwon Jong ^a   Yi, Junsin ^b  

^a Korea Institute of Energy Research (KIER)   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Kunsan National University   (South Korea)

^d GOVERNMENT COLLEGE OF TECHNOLOGY   (India)

^e MADRAS CHRISTIAN COLLEGE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT ENERGY CONVERSION; ETCHING; NONMETALS; OPTIMIZATION; PHOTOVOLTAIC CELLS; PLASMA ETCHING; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; TEXTURING;

ETCH DEPTH; ETCHING PLASMA; FLOW RATIOS; HIGH EFFICIENCY; REACTIVE ION ETCHING (REI); SI SOLAR CELLS; SINGLE-CRYSTALLINE;

REACTIVE ION ETCHING;

EID: 47249144247     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/12/125205     Document Type: Article

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