Kinetics and crystal orientation dependence in high aspect ratio silicon dry etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3453-3461

  Blauw, M A ^a   Zijlstra, T ^a   Bakker, R A ^a   Van Der Drift, E ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; ELECTRON MICROSCOPY; FLUORINE; MICROELECTROMECHANICAL DEVICES; PLASMA DENSITY; PLASMA DIAGNOSTICS; X RAY SPECTROSCOPY;

ASPECT RATIO DEPENDENT ETCHING (ARDE); ATOMIC FLUORINE FLUX;

SEMICONDUCTING SILICON;

EID: 0034318140     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1313578     Document Type: Article

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