Monte Carlo simulation method for etching of deep trenches in Si by a SF6/O2 plasma mixture

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 1, 2003, Pages 87-95

  Marcos, G ^a,b   Rhallabi, A ^a   Ranson, P ^b  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^b UNIVERSITÉ D'ORLÉANS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DESORPTION; ETCHING; MIXTURES; MONTE CARLO METHODS; PROBABILITY; SPUTTERING; SUBSTRATES; SULFUR COMPOUNDS;

PLASMA MIXTURE; PLASMA SURFACE INTERACTIONS; SUBSTRATE SURFACE;

SILICON;

EID: 0037273430     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1521959     Document Type: Article

References (33)

1. R. J. Shul and S. J. Pearton, Handbook of Advanced Plasma Processing Techniques (Springer, Berlin, 2000).
2. A. Grill, Cold Plasma in Materials Fabrication (IEEE, New York, 1994). p. 231.
3. S. Aachboun and P. Ranson, J. Vac. Sci. Technol. A 17, 2270 (1999).
4. S. Tachi, K. Tsujimoto, S. Arai, and T. Kure, J. Vac. Sci. Technol. A 9, 796 (1991).
5. V. K. Singh, E. S. G. Shaqfeh, and J. P. McVittie, J. Vac. Sci. Technol. B 10, 1091 (1992).
6. M. Sato and Y. Arita, J. Electrochem. Soc. 134 (1987).
7. I. W. Rangelow, Vacuum 62, 279 (2001).
8. M. Boufnichel et al. (unpublished).
9. R. Smith, S. J. Wilde, G. Carter, I. V. Katardjiev, and M. J. Nobes, J. Vac. Sci. Technol. B 5, 579 (1987).
10. I. V. Katardjiev, G. Carter, and M. J. Nobes, J. Phys. D 22 (1989).
11. A. Rhallabi, L. Houlet, and G. Turban, J. Vac. Sci. Technol. A 18, 1366 (2000).
12. R. J. Hoekstra and M. J. Kushner, J. Vac. Sci. Technol. A 16, 6 (1998).
13. T. Zijlstra, E. Van der Drift, M. J. A. de Dood, E. Snoeks, and A. Polman, J. Vac. Sci. Technol. B 17, 2734 (1999).
14. M. A. Blauw, T. Zijlstra, R. A. Bakker, and E. van der Drift, J. Vac. Sci. Technol. B 18, 3453 (2000).
15. M. Boufnichel, S. Aachboun, F. Grangeon, P. Lefaucheux, and P. Ranson, J. Vac. Sci. Technol. B 20, 1508 (2002).
16. C. Verove, thesis at INSA (Institut National des Sciences Appliquées) in Lyon, 1998.
17. A. Rhallabi, thesis, University of Nantes, 1992.
18. M. Boufnichel, R. Dussart, P. Lefaucheux, G. Marcos, A. Rhallabi, R. Benoit, and P. Ranson, Proceedings of the 16th Escampig Congress, Grenoble, July 2002.
19. M. Boufnichel, P. Lefaucheux, R. Dussart, and P. Ranson (unpublished).
20. T. Lill, M. Grimbergen, and D. Mui, J. Vac. Sci. Technol. B 19, 2123 (2001).
21. M. J. Vasile and F. A. Stevie, J. Appl. Phys. 53, 3799 (1982).
22. Y. H. Lee and M. Chen, J. Appl. Phys. 54, 5966 (1983).
23. K. R. Ryan and I. C. Plumb, Plasma Chem. Plasma Process. 207 (1990).
24. F. Grangeon, C. Hibert, X. Metais, P. Lefauchaux, and P. Ranson, Proceedings of the 13th International Colloquium Plasma Processes, Antibes, July 2001.
25. G. Hancock, M. J. Toogood and J. P. Sucksmith, Proceedings of the Fourth Jap. Symp-Plasma. Chem., Tokyo, June 1991.
26. T. Chevolleau, thesis, University of Nantes, 1998.
27. H. F. Winters and D. B. Coburn, J. Vac. Sci. Technol. B 3, 1376 (1985).
28. T. Chevolleau, P. Y. Tessie, C. Cardinaud, and G. Turban, J. Vac. Sci. Technol. A 15, 2661 (1997).
29. P. C. Zalm, J. Appl. Phys. 54, 2660 (1983).
30. P. Sigmund, Phys. Rev. (1969).
31. P. C. Zalm, Pure Appl. Chem. 57 (1985).
32. M. E. Barone and D. B. Graves, J. Appl. Phys. 77, 1263 (1995).
33. G. Kokkorois, E. Gogolides, and A. G. Boudouvis, J. Appl. Phys. 91, 2697 (2002).