SiO xF y passivation layer in silicon cryoetching

Journal of Applied Physics

Volumn 98, Issue 10, 2005, Pages

  Mellhaoui, X ^a   Dussart, R ^a   Tillocher, T ^a   Lefaucheux, P ^a   Ranson, P ^a   Boufnichel, M ^b   Overzet, L J ^c  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b STMICROELECTRONICS   (France)

^c UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PASSIVATION LAYERS; SILICON CRYOETCHING;

ETCHING; MASS SPECTROMETERS; PASSIVATION; SILICON WAFERS; THIN FILMS;

SILICON COMPOUNDS;

EID: 28644448956     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2133896     Document Type: Article

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