The passivation layer formation in the cryo-etching plasma process

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1128-1131

  Dussart, R ^a   Mellhaoui, X ^a   Tillocher, T ^a   Lefaucheux, P ^a   Boufnichel, M ^b   Ranson, P ^a  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Cryo etching; Passivation layer; Plasma process

Indexed keywords

CRYOGENICS; DEPOSITION; ELECTRONS; ELLIPSOMETRY; PASSIVATION; PLASMA ETCHING; SILICON COMPOUNDS;

CRYO-ETCHING; PASSIVATION LAYERS; PLASMA PROCESS; SILICON ETCHING;

SEMICONDUCTOR GROWTH;

EID: 34247611939     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.048     Document Type: Article

References (7)

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