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Volumn 84, Issue 5-8, 2007, Pages 1128-1131

The passivation layer formation in the cryo-etching plasma process

Author keywords

Cryo etching; Passivation layer; Plasma process

Indexed keywords

CRYOGENICS; DEPOSITION; ELECTRONS; ELLIPSOMETRY; PASSIVATION; PLASMA ETCHING; SILICON COMPOUNDS;

EID: 34247611939     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.048     Document Type: Article
Times cited : (28)

References (7)
  • 5
    • 34247596827 scopus 로고    scopus 로고
    • F. Lärmer and A. Schilp US patent no 5498312 (1996).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.