Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process

Microsystem Technologies

Volumn 16, Issue 5, 2010, Pages 863-870

  Sokmen U ^a   Stranz, A ^a   Fundling S ^a   Merzsch, S ^a   Neumann, R ^a   Wehmann, H H ^a   Peiner, E ^a   Waag, A ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP REACTIVE ION ETCHING; DEEP STRUCTURE; ETCH RATES; HIGH ASPECT RATIO; METAL ORGANIC; REACTIVE ION; SUBMICRON DIAMETERS; THERMOELECTRIC GENERATORS; VAPOUR-PHASE;

ASPECT RATIO; CRYOGENICS; DRY ETCHING; ELECTROMAGNETIC INDUCTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; ORGANOMETALLICS; PLASMA ETCHING; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

REACTIVE ION ETCHING;

EID: 77952421235     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-010-1035-7     Document Type: Conference Paper

References (8)

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