Oxidation threshold in silicon etching at cryogenic temperatures

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 1073-1082

  Tillocher, T ^a   Dussart, R ^a   Mellhaoui, X ^a   Lefaucheux, P ^a   Maaza, N Mekkakia ^a   Ranson, P ^a   Boufnichel, M ^b   Overzet, L J ^c  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b STMICROELECTRONICS   (France)

^c UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENIC ETCHING PROCESS; CRYOGENIC TEMPERATURES; PASSIVATION LAYERS; SILICON ETCHING;

CRYOGENICS; ETCHING; MASS SPECTROMETRY; OXIDATION; PASSIVATION; PLASMAS; SILICON WAFERS; THERMAL EFFECTS;

SILICON;

EID: 33745509453     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2210946     Document Type: Article

References (30)

1. F. Laermer and A. Schilp, U.S. Patent No. 5498312 (1996).
2. R. Dussart, J. Micromech. Microeng. 14, 190 (2004).
3. A. Campo, C. Cardinaud, and G. Turban, J. Vac. Sci. Technol. B 13, 235 (1995).
4. A. Campo, C. Cardinaud, and G. Turban, Plasma Sources Sci. Technol. 4, 398 (1995).
5. J. H. Thomas and J.-S. Maa, Appl. Phys. Lett. 43, 859 (1983).
6. G. S. Oehrlein, S. W. Robey, and J. L. Linstrom, Appl. Phys. Lett. 52, 1170 (1988).
7. J. W. Bartha, J. Greschner, M. Puech, and P. Maquin, Microelectron. J. 27, 453 (1995).
8. M. Puech and P. Maquin, Appl. Surf. Sci. 100/101, 579 (1996).
9. C. J. Mogab, A. C. Adams, and D. L. Flamm, J. Appl. Phys. 49, 3796 (1978).
10. S. Aachboun, P. Ranson, C. Hibert, and M. Boufnichel, J. Vac. Sci. Technol. A 18, 1848 (2000).
11. F. F. Chen and J. P. Chang, Principles of Plasma Processing (Kluwer, Dordrecht / Academic, New York / Plenum, New York, 2002).
12. X. Mellhaoui, R. Dussart, T. Tillocher, P. Lefaucheux, and P. Ranson, J. Appl. Phys. 98, 104901 (2005).
13. K. Ninomiya, K. Suzuki, S. Nishimatsu, and O. Okada, J. Appl. Phys. 62, 1459 (1987).
14. K. R. Ryan and I. C. Plumb, Plasma Chem. Plasma Process. 8, 263 (1988).
15. R. d'Agostino and D. L. Flamm, J. Appl. Phys. 52, 162 (1989).
16. J. Dabroski and H.-J. Müssig, Silicon Surfaces and Formation of Interfaces (World Scientific, Singapore, 2000).
17. T. Engel, Surf. Sci. Rep. 18, 91 (1993).
18. N. Mutsukura and G. Turban, Plasma Chem. Plasma Process. 10, 27 (1990).
19. T. Chevolleau, Ph.D. thesis, Universitá de Nantes, 1998.
20. A. Picard, G. Turban, and B. Grolleau, J. Phys. D 19, 991 (1985).
21. I. C. Plumb and K. R. Ryan, Plasma Chem. Plasma Process. 9, 409 (1989).
22. K. R. Ryan and I. C. Plumb, Plasma Chem. Plasma Process. 8, 281 (1988).
23. J. J. Wagner and W. W. Brandt, Plasma Chem. Plasma Process. 1, 201 (1981).
24. P. Y. Tessier, T. Chebolleau, C. Cardinaud, and B. Grolleau, Nucl. Instrum. Methods Phys. Res. B 15, 280 (1999).
25. M. J. Vasile and F. A. Stevie, J. Appl. Phys. 53, 3799 (1982).
26. R. Dussart, X. Mellhaoui, T. Tillocher, P. Lefaucheux, M. Volatier, C. Socquet-Clerc, P. Brault, and P. Ranson, J. Phys. D 38, 3395 (2005).
27. K. R. Ryan, Plasma Chem. Plasma Process. 9, 483 (1989).
28. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley-Interscience, New York, 1994).
29. M. Boufnichel, S. Aachboun, F. Grangeon, P. Lefaucheux, and P. Ranson, J. Vac. Sci. Technol. B 20, 1508 (2002).
30. M. Boufnichel, S. Aachboun, P. Lefaucheux, and P. Ranson, J. Vac. Sci. Technol. B 21, 267 (2003).