SO2 passivating chemistry for silicon cryogenic deep etching

Plasma Sources Science and Technology

Volumn 17, Issue 4, 2008, Pages

  Duluard, C Y ^a,b   Dussart, R ^a   Tillocher, T ^a   Pichon, L E ^a   Lefaucheux, P ^a   Puech, M ^b   Ranson, P ^a  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENIC TEMPERATURES; DEEP ETCHING; GAS CONCENTRATION; GAS-FLOW RATIO; GASPHASE; NEUTRAL SPECIES; O RADICALS; PASSIVATION LAYER; PLASMA CHEMISTRIES; REACTION SCHEMES; RELATIVE DENSITY; SILICON ETCHING;

ATOMIC SPECTROSCOPY; CRYOGENICS; DIAMOND FILMS; EMISSION SPECTROSCOPY; ETCHING; GAS DYNAMICS; GASES; INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETRY; MOLECULAR SPECTROSCOPY; OPTICAL EMISSION SPECTROSCOPY; SPECTRUM ANALYSIS; SURFACE REACTIONS;

PASSIVATION;

EID: 67649875315     PISSN: 09630252     EISSN: 13616595     Source Type: Journal    
DOI: 10.1088/0963-0252/17/4/045008     Document Type: Article

References (31)

1. Laermer F and Schilp A 1996 US Patent 5498312
2. Tillocher T, Dussart R, Mellhaoui X, Lefaucheux P, Maaza N M, Ranson P, Boufnichel M and Overzet L J 2006 J. Vac. Sci. Technol. A 24 1073-82
3. Dussart R, Mellhaoui X, Tillocher T, Lefaucheux P, Volatier M, Socquet-Clerc C, Brault P and Ranson P 2005 J. Phys. D: Appl. Phys. 38 3395-402
4. Dussart R, Boufnichel M, Marcos G, Lefaucheux P, Basillais A, Benoit R, Tillocher T, Mellhaoui X, Estrade-Szwarckopf H and Ranson P 2004 J. Micromech. Microeng. 14 190-6
5. Ninomiya K, Suzuki K, Nishimatsu S and Okada O 1987 J. Appl. Phys. 62 1459-68
6. Coburn J W and Chen M 1980 J. Appl. Phys. 51 3134-6
7. d'Agostino R, Cramarossa F, Benedictis S D, Fracassi F, Lska L and Maek K 1985 Plasma Chem. Plasma Process. 5 239-53
8. Gaboriau F, Cartry G, Peignon M-C and Cardinaud Ch 2006 J. Phys. D: Appl. Phys. 39 1830-45
9. Donnelly V M, Flamm D L, Dautremont-Smith W C and Werder D J 1984 J. Appl. Phys. 55 242-52
10. Blanks K A, Tabor A E and Becker K 1987 J. Chem. Phys. 86 4871-5
11. Walkup R E, Saenger K L and Selwyyn G S 1986 J. Chem. Phys. 84 2668-74
12. Booth J P, Joubert O, Pelletier J and Sadeghi N 1991 J. Appl. Phys. 69 618-26
13. Granier A, Chéreau D, Henda K, Safari R and Leprince P 1994 J. Appl. Phys. 75 104-14
14. Ralchenko Y, Jou F C, Kelleher D E, Kramida A E, Musgrove A, Reader J, Wiese W L and Olsen K 2007 NIST Atomic Spectra Database http://physics.nist.gov/ asd3
15. Puech M and Maquin P 1996 Appl. Surf. Sci. 100-101 579-82
16. Lovas F J, Tiemann E and Johnson D R 1974 J. Chem. Phys. 60 5005-5010
17. Field T A, Slattery A E, Adams D J and Morrison D D 2005 J. Phys. B: At. Mol. Opt. Phys. 38 255-64
18. Cheng B M and Hung W C 1999 J. Chem. Phys. 110 188-91
19. Herron J T and Huie R E 1980 Chem. Phys. Lett. 76 322-4
20. Mutsukura N and Turban G 1990 Plasma Chem. Plasma Process. 10 27-47
21. Ryan K R and Plumb I C 1988 Plasma Chem. Plasma Process. 8 263-80
22. Snijkers R J M M, Coulon J F and Turban G 1991 J. Phys. D: Appl. Phys. 24 1098-101
23. Wagner J J and Brandt W W 1981 Plasma Chem. Plasma Process. 1 201-15
24. Picard A, Turban G and Grolleau B 1986 J. Phys. D: Appl. Phys. 19 991-1005
25. Plumb I C and Ryan K R 1986 Plasma Chem. Plasma Process. 6 247-58
26. Mellhaoui X, Dussart R, Tillocher T, Lefaucheux P, Ranson P, Boufnichel M and Overzet L J 2005 J. Appl. Phys. 98 104901
27. d'Agostino R and Flamm D L 1981 J. Appl. Phys. 52 162-7
28. Tessier P Y, Chevolleau T, Cardinaud C and Grolleau B 1999 Nucl. Instrum. Methods Phys. Res. B 155 280-8
29. Campo A, Cardinaud C and Turban G 1995 J. Vac. Sci. Technol. B 13 235-41
30. Ryan K R and Plumb I C 1990 Plasma Chem. Plasma Process. 10 207-29
31. Ryan K R 1989 Plasma Chem. Plasma Process. 9 483-96