Etching of high aspect ratio structures in Si using SF 6/O 2 plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 606-615

  Gomez, Sergi ^a   Belen, Rodolfo Jim ^a   Kiehlbauch, Mark ^b   Aydil, Eray S ^a  

^a University of California   (United States)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; ETCH RATES; FEED GASES; OPTICAL EMISSION;

ANISOTROPY; ASPECT RATIO; CRYSTAL ORIENTATION; INDUCTIVELY COUPLED PLASMA; INTEGRATED CIRCUIT MANUFACTURE; MASS SPECTROMETRY; MICROELECTROMECHANICAL DEVICES; OPTIMIZATION; PASSIVATION; PLASMA DIAGNOSTICS; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY;

PLASMA ETCHING;

EID: 3142628358     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1710493     Document Type: Article

References (25)

1. A. A. Ayon, R. Braff, C. C. Lin, H. H. Sawin, and M. A. Schmidt, J. Electrochem. Soc. 146, 339 (1999).
2. W. C. Tian, J. W. Weigold, and S. W. Pang, J. Vac. Sci. Technol. B 18, 1890 (2000).
3. G. Craciun, M. A. Blauw, E. van der Drift, P. M. Sarro, and P. J. French, J. Micromech. Microeng. 12, 390 (2002).
4. S. Aachboun and P. Ranson, J. Vac. Sci. Technol. A 17, 2270 (1999).
5. R. Dagostino and D. L. Flamm, J. Appl. Phys. 52, 162 (1981).
6. D. L. Flamm, V. M. Donnelly, and J. A. Mucha, J. Appl. Phys. 52, 3633 (1981).
7. T. Syau, B. J. Baliga, and R. W. Hamaker, J. Electrochem. Soc. 138, 3076 (1991).
8. C. P. Demic, K. K. Chan, and J. Blum, J. Vac. Sci. Technol. B 10, 1105 (1992).
9. H. F. Winters and J. W. Coburn, Surf. Sci. Rep. 14, 161 (1992).
10. R. D. Mansano, P. Verdonck, and H. S. Maciel, Appl. Surf. Sci. 101, 583 (1996).
11. V. K. Singh, E. S. G. Shaqfeh, and J. P. McVittie, J. Vac. Sci. Technol. B 10, 1091 (1992).
12. V. A. Yunkin, D. Fischer, and E. Voges, Microelectron. Eng. 23, 373 (1994).
13. M. Boufnichel, S. Aachboun, F. Grangeon, P. Lefaucheux, and P. Ranson, J. Vac. Sci. Technol. B 20, 1508 (2002).
14. M. Boufnichel, S. Aachboun, P. Lefaucheux, and P. Ranson, J, Vac. Sci. Technol. B 21, 267 (2003).
15. S. Aachboun, P. Ranson, C. Hilbert, and M. Boufnichel, J. Vac. Sci. Technol. A 18, 1848 (2000).
16. M. A. Blauw, T. Zijlstra, R. A. Bakker, and E. van der Drift, J. Vac. Sci. Technol. B 18, 3453 (2000).
17. S. J. Ullal, A. R. Godfrey, E. Edelberg, L. Braly, V. Vahedi, and E. S. Aydil, J. Vac. sci. Technol. A 20, 43 (2002).
18. J. W. Coburn and M. Chen, J. Appl. Phys. 51, 3134 (1980).
19. V. M. Donnelly, D. L. Flamm, W. C. Dautremontsmith, and D. J. Werder, J. Appl. Phys. 55, 242 (1984).
20. R. A. Gottscho and V. M. Donnelly, J. Appl. Phys. 56, 245 (1984).
21. R. E. Walkup, K. L. Saenger, and G. S. Selwyn, J. Chem. Phys. 84, 2668 (1986).
22. S. J. Ullal, T. W. Kim, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 21, 589 (2003).
23. E. A. Edelberg, A. Perry, N. Benjamin, and E. S. Aydil, J. Vac. Sci. Technol. A 17, 506 (1999).
24. D. C. Gray, I. Tepermeister, and H. H. Sawin, J. Vac. Sci. Technol. B 11, 1243 (1993).
25. D. B. Graves and D. Humbird, Appl. Surf. Sci. 192, 72 (2002).