Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6311-6318

  Blauw, M A ^a   Van der Drift, E ^a   Marcos, G ^b   Rhallabi, A ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ASPECT RATIO; COMPUTER SIMULATION; INDUCTIVELY COUPLED PLASMA; IONS; MONTE CARLO METHODS; OXYGEN; PASSIVATION; SILICON; SURFACES;

ION FLUX; SURFACE PASSIVATION;

PLASMA ETCHING;

EID: 0344084280     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1621713     Document Type: Article

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