SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 16, Issue 5, 2013, Pages 1217-1231

Recent development of gallium oxide thin film on GaN

(2) Oon, Hooi Shy a Cheong, Kuan Yew a

a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING (Malaysia)

Author keywords

Gallium nitride; Gallium oxide; Thermal oxidation

Indexed keywords

GALLIUM NITRIDE; GATES (TRANSISTOR); MATERIALS HANDLING; METALS; MOS DEVICES; NITRIDES; OXIDE SEMICONDUCTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; THERMOOXIDATION;

GALLIUM NITRIDES (GAN); GALLIUM OXIDES; MAXIMUM FREQUENCY; OPERATION TEMPERATURE; OXIDE FORMATION; PHYSICAL LIMITATIONS; POWER HANDLING; THERMAL OXIDATION;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84885327835 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2013.01.027 Document Type: Review

Times cited : (42)

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