A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film

IEEE Sensors Journal

Volumn 11, Issue 4, 2011, Pages 999-1003

  Weng, W Y ^a   Hsueh, T J ^b   Chang, S J ^a   Huang, G J ^a   Hsueh, H T ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE AREA; APPLIED BIAS; DEEP-UV; GAN THIN FILMS; MEASURED CURRENTS; OXIDIZATION; REJECTION RATIOS; SOLAR-BLIND; SOLAR-BLIND PHOTODETECTORS; ULTRAVIOLET LIGHTS;

FURNACES; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; THIN FILMS;

PHOTODETECTORS;

EID: 79951538576     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2010.2062176     Document Type: Article

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