Blue light-emitting diodes with an embedded native gallium oxide pattern structure

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1431-1433

  Lin, Chia Feng ^a   Chen, Kuei Ting ^a   Huang, Kun Pin ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Light emitting diodes (LEDs); optical device fabrication; oxidation; semiconductor device measurements

Indexed keywords

ACTIVE LAYER; AIR VOID STRUCTURE; ARRAY PATTERNS; BLUE LIGHT-EMITTING; EXTERNAL QUANTUM EFFICIENCY; GALLIUM OXIDES; GAN LAYERS; INTERNAL QUANTUM EFFICIENCY; LATERAL OVERGROWTH; LED STRUCTURE; LIGHT OUTPUT POWER; MICROPHOTOLUMINESCENCE; OPTICAL DEVICE FABRICATION; PATTERN STRUCTURE; PHOTOELECTROCHEMICAL OXIDATION; PIEZO-ELECTRIC FIELDS; SCATTERING CENTERS; SEMICONDUCTOR DEVICE MEASUREMENTS; TEMPERATURE DEPENDENT;

DIODES; DISKS (STRUCTURAL COMPONENTS); GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; OPTICAL DEVICES; OPTICAL INSTRUMENTS; OXIDATION; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES; TEXTILE PRINTING;

LIGHT EMITTING DIODES;

EID: 78649446072     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2081341     Document Type: Article

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