High-performance GaN MOSFET with high-κ LaAlO 3/SiO 2 gate dielectric

IEEE Electron Device Letters

Volumn 33, Issue 1, 2012, Pages 35-37

  Tsai, C Y ^a   Wu, T L ^a   Chin, Albert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; high ; LaAlO 3; MOSFET

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; DRIVE CURRENTS; GAN; HIGH BREAKDOWN VOLTAGE; LAALO 3; LOW THRESHOLD VOLTAGE; MOS-FET; ON-RESISTANCE; RECESSED GATE;

GALLIUM NITRIDE; GATE DIELECTRICS; HETEROJUNCTION BIPOLAR TRANSISTORS; LANTHANUM ALLOYS; MOSFET DEVICES; SILICON COMPOUNDS;

DIELECTRIC MATERIALS;

EID: 84655166497     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2172911     Document Type: Article

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