Thermally oxidized GaN film for use as gate insulators

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 2, 2001, Pages 579-581

  Kim, Hyunsoo ^a   Park, Seong Ju ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATORS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUMERICAL ANALYSIS; SCANNING ELECTRON MICROSCOPY; THERMOOXIDATION; X RAY DIFFRACTION ANALYSIS;

BREAKDOWN FIELD STRENGTH; FURNACE OXIDATION; GATE INSULATORS; METAL OXIDE SEMICONDUCTOR; THERMALLY GROWN GALLIUM OXIDE; THERMALLY OXIDIZED GALLIUM NITRIDE FILM;

GALLIUM NITRIDE;

EID: 0035269474     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1349733     Document Type: Article

References (16)

1. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era, Vol. 1 (Lattice, California, 1986), p. 198.
2. C. D. Thurmond, G. P. Schwartz, G. W. Kammlott, and B. Schwartz, J. Electrochem. Soc. 127, 1366 (1980).
3. W. E. Spicer, I. Lindau, P. Skeath, and C. Y. Su, J. Vac. Sci. Technol. 17, 1019 (1980).
4. W. F. Croydon and E. H. C. Parker, Dielectric Films on Gallium Arsenide (Gordon and Breach, New York, 1981).
5. Q. Chen, J. W. Yang, R. Gaska, M. A. Khan, M. S. Shur, G. J. Sullivan, A. L. Sailor, J. A. Higgings, A. T. Ping, and I. Adesida, IEEE Electron Device Lett. 19, 44 (1998).
6. G. J. Sullivan, M. Y. Chen, J. A. Higgins, J. W. Yang, Q. Chen, R. L. Pierson, and B. T. McDermott, IEEE Electron Device Lett. 19, 198 (1998).
7. F. Ren, M. Hong, S. N. G. Chu, M. A. Marcus, A. Baca, S. J. Pearton, and C. R. Abernathy, Appl. Phys. Lett. 73, 3893 (1998).
8. H. C. Casey, G. G. Fountain, R. G. Alley, B. P. Keller, and S. P. Den-Baars, Appl. Phys. Lett. 68, 1850 (1996).
9. S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, and M. Umeno, Appl. Phys. Lett. 73, 809 (1998).
10. W. P. Li, R. Zhang, Y. G. Zhou, J. Yin, H. M. Bu, Z. Y. Luo, B. Shen, Y. Shi, R. L. Jiang, S. L. Gu, Z. G. Liu, and Y. D. Zheng, Appl. Phys. Lett. 75, 2416 (1999).
11. S. D. Wolter, S. E. Mohney, H. Venugopalan, A. E. Wickenden, and D. D. Keleske, J. Electrochem. Soc. 145, 629 (1998).
12. E. D. Readinger, S. D. Wolter, D. L. Waltermyer, J. M. Delucca, S. E. Mohney, B. I. Prenitzer, L. A. Giannuzzi, and R. J. Molnar, J. Electron. Mater. 28, 257 (1999).
13. J. A. Kohn, G. Katz, and J. D. Broder, Am. Mineral. 42, 398 (1957).
14. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998), p. 360.
15. G. V. Samsonov, The Oxide Handbook, 2nd ed. (IFI/Plenum, New York, 1982), p. 213.
16. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998), p. 356.