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Applied Physics Letters

Volumn 82, Issue 24, 2003, Pages 4304-4306

Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN

(3) Lee, Ching Ting a,b Chen, Hong Wei b Lee, Hsin Ying b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM COMPOUNDS; VARACTORS;

PHOTOELECTROCHEMICAL METHOD;

MOS DEVICES;

EID: 0038110835 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1584520 Document Type: Article

Times cited : (164)

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